Philips PRF947 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
book, halfpage
M3D102
PRF947
UHF wideband transistor
Product specification
Supersedes data of 1999 Mar 01
1999 Jul 23
Philips Semiconductors Product specification
UHF wideband transistor PRF947
FEATURES
• Small size
• Low noise
• Low distortion
• High gain
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Communication and instrumentation systems.
DESCRIPTION
Silicon NPN transistor in a surface mount 3-pin SOT323
package. Thetransistor is primarily intended for wideband
applicationsin the GHz-range in theRFfrontend of analog
and digital cellular telephones, cordless phones, radar
detectors, pagers and satellite TV-tuners.
QUICK REFERENCE DATA
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
Marking code: V0.
3
1
1
2
MAM062
Fig.1 Simplified outline (SOT323) and symbol.
3
2
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
C
re
f
T
G
UM
NF noise figure Γ
feedback capacitance IC= 0; VCB=6V; f=1MHz − 0.3 − pF
transition frequency IC= 15 mA; VCE=6V; fm= 1 GHz − 8.5 − GHz
maximum unilateral power gain IC= 15 mA; VCE=6V;
T
=25°C; f = 1 GHz
amb
= Γ
S
; IC= 5 mA; VCE=6V;
opt
− 16 − dB
− 1.5 − dB
f = 1 GHz
P
R
tot
th j-s
total power dissipation Ts=60°C; note 1 −−250 mW
thermal resistance from junction
P
= 250 mW −−460 K/W
tot
to soldering point
Note
1. Ts is the temperature at the soldering point of the collector pin.
1999 Jul 23 2
Philips Semiconductors Product specification
UHF wideband transistor PRF947
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
Note
1. T
s
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 10 V
emitter-base voltage open collector − 1.5 V
DC collector current − 50 mA
average collector current − 50 mA
total power dissipation Ts=60°C; note 1 − 250 mW
storage temperature −65 +150 °C
junction temperature − 175 °C
is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction
P
= 250 mW; Ts=60°C; note 1 460 K/W
tot
to soldering point
Note
is the temperature at the soldering point of the collector pin.
1. T
s
1999 Jul 23 3
Philips Semiconductors Product specification
UHF wideband transistor PRF947
CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
DC characteristics
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
AC characteristics
C
re
f
T
2
|s
|
21
G
UM
NF noise figure Γ
collector-base breakdown voltage IC= 100 µA; IE=0 20 −−V
collector-emitter breakdown
IC= 100 µA; IB=0 10 −−V
voltage
emitter-base breakdown voltage IE=10µA; IC= 0 1.5 −−V
collector-base leakage current VCB= 10 V; IE=0 −−100 nA
emitter-base leakage current VEB=1V; IC=0 −−100 nA
DC current gain IC= 5 mA; VCE= 6 V 50 100 200
= 15 mA; VCE=6V − 100 −
I
C
feedback capacitance IC= 0; VCB= 6 V; f = 1 MHz − 0.3 − pF
transition frequency IC= 15 mA; VCE=6V; fm= 1 GHz − 8.5 − GHz
insertion gain IC= 15 mA; VCE=6V; f=1GHz − 14.5 − dB
maximum unilateral power gain;
note 1
IC= 15 mA; VCE=6V;
T
=25°C; f = 1 GHz
amb
= 15 mA; VCE=6V;
I
C
T
=25°C; f = 2 GHz
amb
= Γ
S
; IC= 5 mA; VCE=6V;
opt
− 16 − dB
− 10 − dB
− 1.5 − dB
f = 1 GHz
Γ
= Γ
S
; IC= 5 mA; VCE=6V;
opt
− 2.1 − dB
f = 2 GHz
Note
1. G
is the maximum unilateral power gain, assuming s12 is zero.
UM
1999 Jul 23 4
2
s
G
UM
10
-------------------------------------------------------1s
21
2
–()1s
11
–()
dBlog=
2
22
Philips Semiconductors Product specification
UHF wideband transistor PRF947
150
Ts (
MGS496
°C)
400
handbook, halfpage
P
tot
(mW)
300
200
100
0
0 50 100 200
Fig.2 Power derating as a function of soldering
point temperature.
120
handbook, halfpage
h
FE
80
40
0
0
VCE=6V.
10 50
20 30 40
MGS497
IC (mA)
Fig.3 DC current gain as a function of collector
current; typical values.
0.5
handbook, halfpage
C
re
(pF)
0.4
0.3
0.2
0.1
0
04 12
IC=Ic= 0; f = 1 MHz.
8
MGS498
VCB (V)
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
1999 Jul 23 5
10
handbook, halfpage
f
T
(GHz)
8
6
4
2
0
01020 40
VCE= 6 V; fm= 1 GHz; T
amb
=25°C.
30
Fig.5 Transition frequency as a function of
collector current; typical values.
MGS499
IC (mA)
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