Philips PNP3055E Datasheet

Philips Semiconductors Product specification

PowerMOS transistor PHP3055E

GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a
plastic envelope featuring high V

DS

Drain-source voltage 60 V

avalanche energy capability, stable I

D

Drain current (DC) 12 A

blocking voltage, fast switching and P

tot

Total power dissipation 50 W

high thermal cycling performance R

DS(ON)

Drain-source on-state resistance 0.15 Ω
withlowthermalresistance.Intended
for use in Switched Mode Power
Supplies (SMPS), motor control
circuits and general purpose
switching applications.

PINNING - TO220AB PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

1 gate
2 drain
3 source

tab drain

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

D

Continuous drain current Tmb = 25 ˚C; VGS = 10 V - 12 A

Tmb = 100 ˚C; VGS = 10 V - 9 A

I

DM

Pulsed drain current Tmb = 25 ˚C - 48 A

P

D

Total dissipation Tmb = 25 ˚C - 50 W
∆PD/∆TmbLinear derating factor Tmb > 25 ˚C - 0.33 W/K
V

GS

Gate-source voltage - ± 30 V
E

AS

Single pulse avalanche VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω; - 25 mJ

energy VGS = 10 V
I

AS

Peak avalanche current VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω;- 6 A

VGS = 10 V

Tj, T

stg

Operating junction and - 55 175 ˚C

storage temperature range

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-mb

Thermal resistance junction to - - 3 K/W
mounting base

R

th j-a

Thermal resistance junction to - 60 - K/W
ambient

123

tab

d

g

s

March 1997 1 Rev 1.000

Philips Semiconductors Product specification

PowerMOS transistor PHP3055E

ELECTRICAL CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

Drain-source breakdown VGS = 0 V; ID = 0.25 mA 60 - - V
voltage

∆V

(BR)DSS

/ Drain-source breakdown VDS = VGS; ID = 0.25 mA - 0.08 - V/K

∆T

j

voltage temperature coefficient

R

DS(ON)

Drain-source on resistance VGS = 10 V; ID = 6 A - 0.1 0.15 Ω

V

GS(TO)

Gate threshold voltage VDS = VGS; ID = 0.25 mA 2.0 3.0 4.0 V

g

fs

Forward transconductance VDS = 50 V; ID = 6 A 2.4 4.0 - S

I

DSS

Drain-source leakage current VDS = 60 V; VGS = 0 V - 0.1 25 µA

VDS = 48 V; VGS = 0 V; Tj = 150 ˚C - 1 250 µA

I

GSS

Gate-source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA

Q

g(tot)

Total gate charge ID = 10 A; V

DD

= 48 V; VGS = 10 V - 10 12 nC

Q

gs

Gate-source charge - 2 3 nC

Q

gd

Gate-drain (Miller) charge - 5.6 7 nC

t

d(on)

Turn-on delay time VDD = 30 V; ID = 10 A; - 8 - ns

t

r

Turn-on rise time RG = 24 Ω; RD = 2.7 Ω -55-ns

t

d(off)

Turn-off delay time - 25 - ns

t

f

Turn-off fall time - 22 - ns

L

d

Internal drain inductance Measured from contact screw on - 3.5 - nH

tab to centre of die

L

d

Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH

from package to centre of die

L

s

Internal source inductance Measured from source lead 6 mm - 7.5 - nH

from package to source bond pad

C

iss

Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 220 - pF

C

oss

Output capacitance - 108 - pF

C

rss

Feedback capacitance - 48 - pF

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

S

Continuous source current Tmb = 25˚C - - 12 A
(body diode)

I

SM

Pulsed source current (body Tmb = 25˚C - - 48 A
diode)

V

SD

Diode forward voltage IS = 10 A; VGS = 0 V - - 1.5 V

t

rr

Reverse recovery time IS = 10 A; VGS = 0 V; - 38 - ns

dI/dt = 100 A/µs

Q

rr

Reverse recovery charge - 0.1 - µC

March 1997 2 Rev 1.000

Philips Semiconductors Product specification

PowerMOS transistor PHP3055E

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

D 25 ˚C

= f(Tmb)

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

D 25 ˚C

= f(Tmb); conditions: VGS ≥ 10 V

Fig.3. Safe operating area. Tmb = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

p

Fig.4. Transient thermal impedance.

Z

th j-mb

= f(t); parameter D = tp/T

Fig.5. Typical output characteristics

.

ID = f(VDS); parameter V

GS

Fig.6. Typical on-state resistance

.

R

DS(ON)

= f(ID); parameter V

GS

0 20 40 60 80 100 120 140 160 180

Tmb / C

PD%

Normalised Power Derating

120
110
100

90
80
70
60
50
40
30
20
10

0

0

0.5

0.2

0.1

0.05

0.02
D =

t

p

t

p

T

T

P

t

D

1us

10us 1ms

0.1s

10s

tp, pulse widtht (s)

Zth j-mb, Transient Thermal Impedance (K/W)

10

1

0.1

0.01
1s10ms100us

0 20 40 60 80 100 120 140 160 180

Tmb / C

ID%

Normalised Current Derating

120
110
100

90
80
70
60
50
40
30
20
10

0

0 5 10 15 20 25 30

0

5

10

15

PHP3055E

VDS, Drain-Source voltage (Volts)

ID, Drain current (Amps)

Tj = 25 C

VGS = 4.5 V

5 V

5.5 V

6 V

6.5 V

7 V

10 V

1 10 100 1000

0.1

1

10

100

DC

PHP3055E

VDS, Drain-source voltage (Volts)

ID, Drain current (Amps)

10 ms
100 ms

tp = 10 us

1 ms

100 us

RDS(ON) = VDS/ID

0 5 10 15 20

0

0.1

0.2

0.3

0.4

PHP3055E

ID, Drain current (Amps)

RDS(on), Drain-Source on resistance (Ohms)

VGS = 15 V

Tj = 25 C

10 V

7 V

6.5 V

6 V

5.5 V

March 1997 3 Rev 1.000