Philips PNP10N10E Datasheet

Philips Semiconductors Product Specification

PowerMOS transistor PHP10N10E

GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a
plastic envelope. The device is V

DS

Drain-source voltage 100 V

intended for use in Switched Mode I

D

Drain current (DC) 11 A

Power Supplies (SMPS), motor P

tot

Total power dissipation 60 W

control, welding, DC/DC and AC/DC T

j

Junction temperature 175 ˚C

converters, and in general purpose R

DS(ON)

Drain-source on-state resistance 0.25 Ω

switching applications.

PINNING - TO220AB PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

1 gate
2 drain
3 source

tab drain

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

Drain-source voltage - - 100 V

V

DGR

Drain-gate voltage RGS = 20 kΩ - 100 V

±V

GS

Gate-source voltage - - 30 V

I

D

Drain current (DC) Tmb = 25 ˚C - 11 A

I

D

Drain current (DC) Tmb = 100 ˚C - 7.7 A

I

DM

Drain current (pulse peak value) Tmb = 25 ˚C - 44 A

P

tot

Total power dissipation Tmb = 25 ˚C - 60 W

T

stg

Storage temperature - - 55 175 ˚C

T

j

Junction Temperature - - 175 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-mb

Thermal resistance junction to - - 2.5 K/W
mounting base

R

th j-a

Thermal resistance junction to - 60 - K/W
ambient

123

tab

d

g

s

September 1997 1 Rev 1.000

Philips Semiconductors Product Specification

PowerMOS transistor PHP10N10E

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

Drain-source breakdown VGS = 0 V; ID = 0.25 mA 100 - - V
voltage

V

GS(TO)

Gate threshold voltage VDS = VGS; ID = 1 mA 2.1 3.0 4.0 V

I

DSS

Zero gate voltage drain current VDS = 100 V; VGS = 0 V; Tj = 25 ˚C - 1 10 µA

I

DSS

Zero gate voltage drain current VDS = 100 V; VGS = 0 V; Tj = 125 ˚C - 0.1 1.0 mA

I

GSS

Gate source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA

R

DS(ON)

Drain-source on-state VGS = 10 V; ID = 5.5 A - 0.22 0.25 Ω
resistance

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

g

fs

Forward transconductance VDS = 25 V; ID = 5.5 A 3 4.2 - S

C

iss

Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 400 500 pF

C

oss

Output capacitance - 90 120 pF

C

rss

Feedback capacitance - 35 50 pF

t

d on

Turn-on delay time VDD = 30 V; ID = 3 A; - 9 14 ns

t

r

Turn-on rise time VGS = 10 V; RGS = 50 Ω; - 25 40 ns

t

d off

Turn-off delay time R

gen

= 50 Ω - 3045ns

t

f

Turn-off fall time - 20 40 ns

L

d

Internal drain inductance Measured from contact screw on - 3.5 - nH

tab to centre of die

L

d

Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH

from package to centre of die

L

s

Internal source inductance Measured from source lead 6 mm - 7.5 - nH

from package to source bond pad

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

DR

Continuous reverse drain - - - 11 A
current

I

DRM

Pulsed reverse drain current - - - 44 A

V

SD

Diode forward voltage IF = 11 A ; VGS = 0 V - 1.2 1.5 V

t

rr

Reverse recovery time IF = 11 A; -dIF/dt = 100 A/µs; - 90 - ns

Q

rr

Reverse recovery charge VGS = 0 V; VR = 30 V - 0.35 - µC

AVALANCHE LIMITING VALUE

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

W

DSS

Drain-source non-repetitive ID = 11 A ; VDD ≤ 50 V ; - - 35 mJ
unclamped inductive turn-off VGS = 10 V ; RGS = 50 Ω
energy

September 1997 2 Rev 1.000

Philips Semiconductors Product Specification

PowerMOS transistor PHP10N10E

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

D 25 ˚C

= f(Tmb)

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

D 25 ˚C

= f(Tmb); conditions: VGS ≥ 10 V

Fig.3. Safe operating area. Tmb = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

p

Fig.4. Transient thermal impedance.

Z

th j-mb

= f(t); parameter D = tp/T

Fig.5. Typical output characteristics, Tj = 25 ˚C

.

ID = f(VDS); parameter V

GS

Fig.6. Typical on-state resistance, Tj = 25 ˚C

.

R

DS(ON)

= f(ID); parameter V

GS

0 20 40 60 80 100 120 140 160 180

Tmb / C

PD%

Normalised Power Derating

120
110
100

90
80
70
60
50
40
30
20
10

0

1E-07 1E-05 1E-03 1E-01 1E+01

t / s

Zth j-mb / (K/W)

1E+01

1E+00

1E-01

1E-02

0

0.5

0.2

0.1

0.05

0.02

D =

t

p

t

p

T

T

P

t

D

BUKX52

0 20 40 60 80 100 120 140 160 180

Tmb / C

ID%

Normalised Current Derating

120
110
100

90
80
70
60
50
40
30
20
10

0

0 2 4 6 8 10

BUK452-100A

VDS / V

20

15

10

5

0

4

5

6

7

8

10

15

20

ID / A

VGS / V =

1 100

VDS / V

ID / A

100

10

1

0.1

BUK452-100

10

tp = 10 us

100 us

1 ms
10 ms

100 ms

DC

RDS(ON) = VDS/ID

A

B

0 2 4 6 8 10 12 14 16 18 20

BUK452-100A

ID / A

1.0

0.8

0.6

0.4

0.2

0

4.5 5 5.5 6

6.5
7

7.5
8

10

20

RDS(ON) / Ohm

VGS / V =

September 1997 3 Rev 1.000