Philips PNP10N10E Datasheet
Philips Semiconductors Product Specification
PowerMOS transistor PHP10N10E
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a
plastic envelope. The device is V
DS
Drain-source voltage 100 V
intended for use in Switched Mode I
D
Drain current (DC) 11 A
Power Supplies (SMPS), motor P
tot
Total power dissipation 60 W
control, welding, DC/DC and AC/DC T
j
Junction temperature 175 ˚C
converters, and in general purpose R
DS(ON)
Drain-source on-state resistance 0.25 Ω
switching applications.
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
Drain-source voltage - - 100 V
V
DGR
Drain-gate voltage RGS = 20 kΩ - 100 V
±V
GS
Gate-source voltage - - 30 V
I
D
Drain current (DC) Tmb = 25 ˚C - 11 A
I
D
Drain current (DC) Tmb = 100 ˚C - 7.7 A
I
DM
Drain current (pulse peak value) Tmb = 25 ˚C - 44 A
P
tot
Total power dissipation Tmb = 25 ˚C - 60 W
T
stg
Storage temperature - - 55 175 ˚C
T
j
Junction Temperature - - 175 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction to - - 2.5 K/W
mounting base
R
th j-a
Thermal resistance junction to - 60 - K/W
ambient
123
tab
d
g
s
September 1997 1 Rev 1.000
Philips Semiconductors Product Specification
PowerMOS transistor PHP10N10E
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown VGS = 0 V; ID = 0.25 mA 100 - - V
voltage
V
GS(TO)
Gate threshold voltage VDS = VGS; ID = 1 mA 2.1 3.0 4.0 V
I
DSS
Zero gate voltage drain current VDS = 100 V; VGS = 0 V; Tj = 25 ˚C - 1 10 µA
I
DSS
Zero gate voltage drain current VDS = 100 V; VGS = 0 V; Tj = 125 ˚C - 0.1 1.0 mA
I
GSS
Gate source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA
R
DS(ON)
Drain-source on-state VGS = 10 V; ID = 5.5 A - 0.22 0.25 Ω
resistance
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
g
fs
Forward transconductance VDS = 25 V; ID = 5.5 A 3 4.2 - S
C
iss
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 400 500 pF
C
oss
Output capacitance - 90 120 pF
C
rss
Feedback capacitance - 35 50 pF
t
d on
Turn-on delay time VDD = 30 V; ID = 3 A; - 9 14 ns
t
r
Turn-on rise time VGS = 10 V; RGS = 50 Ω; - 25 40 ns
t
d off
Turn-off delay time R
gen
= 50 Ω - 3045ns
t
f
Turn-off fall time - 20 40 ns
L
d
Internal drain inductance Measured from contact screw on - 3.5 - nH
tab to centre of die
L
d
Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH
from package to centre of die
L
s
Internal source inductance Measured from source lead 6 mm - 7.5 - nH
from package to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
DR
Continuous reverse drain - - - 11 A
current
I
DRM
Pulsed reverse drain current - - - 44 A
V
SD
Diode forward voltage IF = 11 A ; VGS = 0 V - 1.2 1.5 V
t
rr
Reverse recovery time IF = 11 A; -dIF/dt = 100 A/µs; - 90 - ns
Q
rr
Reverse recovery charge VGS = 0 V; VR = 30 V - 0.35 - µC
AVALANCHE LIMITING VALUE
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
W
DSS
Drain-source non-repetitive ID = 11 A ; VDD ≤ 50 V ; - - 35 mJ
unclamped inductive turn-off VGS = 10 V ; RGS = 50 Ω
energy
September 1997 2 Rev 1.000
Philips Semiconductors Product Specification
PowerMOS transistor PHP10N10E
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/P
D 25 ˚C
= f(Tmb)
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/I
D 25 ˚C
= f(Tmb); conditions: VGS ≥ 10 V
Fig.3. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = tp/T
Fig.5. Typical output characteristics, Tj = 25 ˚C
.
ID = f(VDS); parameter V
GS
Fig.6. Typical on-state resistance, Tj = 25 ˚C
.
R
DS(ON)
= f(ID); parameter V
GS
0 20 40 60 80 100 120 140 160 180
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1E-07 1E-05 1E-03 1E-01 1E+01
t / s
Zth j-mb / (K/W)
1E+01
1E+00
1E-01
1E-02
0
0.5
0.2
0.1
0.05
0.02
D =
t
p
t
p
T
T
P
t
D
BUKX52
0 20 40 60 80 100 120 140 160 180
Tmb / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0 2 4 6 8 10
BUK452-100A
VDS / V
20
15
10
5
0
4
5
6
7
8
10
15
20
ID / A
VGS / V =
1 100
VDS / V
ID / A
100
10
1
0.1
BUK452-100
10
tp = 10 us
100 us
1 ms
10 ms
100 ms
DC
RDS(ON) = VDS/ID
A
B
0 2 4 6 8 10 12 14 16 18 20
BUK452-100A
ID / A
1.0
0.8
0.6
0.4
0.2
0
4.5 5 5.5 6
6.5
7
7.5
8
10
20
RDS(ON) / Ohm
VGS / V =
September 1997 3 Rev 1.000
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