Philips PN4392, PN4393, PN4391 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

PN4391 to 4393

N-channel silicon field-effect
transistors

Product specification
File under Discrete Semiconductors, SC07

April 1989

Philips Semiconductors Product specification

N-channel silicon field-effect transistors PN4391 to 4393

DESCRIPTION

Symmetrical silicon n-channel
junction FETs in plastic TO-92
envelopes. They are intended for
applications such as analog switches,
choppers, commutators etc.

PINNING

handbook, halfpage

1 = gate
2 = source
3 = drain

Note: Drain and source are
interchangeable.

QUICK REFERENCE DATA

Drain-source voltage ± V
Total power dissipation

up to T

=25°CP

amb

Drain current

V

= 20 V; VGS=0 I

DS

Gate-source cut-off voltage

V

= 20 V; ID= 1 nA −V

DS

Drain-source on-resistance

I

= 1 mA; VGS=0 R

D

1

2

3

g

MAM042

Fig.1 Simplified outline and symbol, TO-92.

DS

tot

max. 40 V

max. 360 mW

PN4391 PN4392 PN4393

DSS

min. 50 25 5 mA

min. 4 2 0.5 V

GS off

DS on

max. 10 5 3 V

max. 30 60 100 Ω

d
s

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Drain-source voltage ± V
Gate-source voltage −V
Gate-drain voltage −V
Forward gate current (DC) I

DS
GSO
GDO

G

Total power dissipation

up to T
Storage temperature range T
Junction temperature T

=25°CP

amb

tot
stg
j

April 1989 2

max. 40 V
max. 40 V
max. 40 V
max. 50 mA

max. 360 mW

−65 to+150 °C

max. 150 °C