Philips PN3439, PN3440 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
PN3439; PN3440
NPN high-voltage transistors
Product specification
Supersedes data of 1997 Jun 17
File under Discrete Semiconductors, SC04
1997 Sep 04
Philips Semiconductors Product specification
NPN high-voltage transistors PN3439; PN3440
FEATURES
• Low current (max. 100 mA)
• High voltage (max. 350 V).
PINNING
PIN DESCRIPTION
1 collector
2 base
APPLICATIONS
3 emitter
• Telephony and professional communication equipment.
DESCRIPTION
NPN high-voltage transistor in a TO-92; SOT54 plastic
package.
handbook, halfpage
1
2
3
MAM279
1
2
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
PN3439 − 400 V
PN3440 − 300 V
V
CEO
collector-emitter voltage open base
PN3439 − 350 V
PN3440 − 250 V
I
P
h
CM
tot
FE
peak collector current − 200 mA
total power dissipation T
≤ 25 °C − 500 mW
amb
DC current gain IC= 2 mA; VCE=10V
PN3439 30 −
h
FE
DC current gain IC= 20 mA; VCE=10V
PN3440 40 −
f
T
transition frequency IC= 10 mA; VCE= 10 V; f = 100 MHz 70 − MHz
1997 Sep 04 2
Philips Semiconductors Product specification
NPN high-voltage transistors PN3439; PN3440
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter
PN3439 − 400 V
PN3440 − 300 V
collector-emitter voltage open base
PN3439 − 350 V
PN3440 − 250 V
emitter-base voltage open collector − 5V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 100 mA
total power dissipation T
≤ 25 °C − 500 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 250 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
1997 Sep 04 3
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