Philips PN2907A Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
PN2907A
PNP switching transistor
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 May 05
Philips Semiconductors Product specification
PNP switching transistor PN2907A
FEATURES
• High current (max. 600 mA)
• Low voltage (max. 60 V).
PINNING
PIN DESCRIPTION
1 collector
2 base
APPLICATIONS
3 emitter
• Switching and linear amplification.
DESCRIPTION
PNP switching transistor in a TO-92; SOT54 plastic
package. NPN complement: PN2222A.
handbook, halfpage
1
2
3
MAM280
1
2
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
P
h
f
t
CBO
CEO
C
tot
FE
T
off
collector-base voltage open emitter −−60 V
collector-emitter voltage open base −−60 V
collector current (DC) −−600 mA
total power dissipation T
≤ 25 °C − 500 mW
amb
DC current gain IC= −150 mA; VCE= −10 V 100 300
transition frequency IC= −50 mA; VCE= −20 V; f = 100 MHz 200 − MHz
turn-off time I
= −150 mA; I
Con
= −15 mA; I
Bon
=15mA − 365 ns
Boff
1997 May 05 2
Philips Semiconductors Product specification
PNP switching transistor PN2907A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−60 V
collector-emitter voltage open base −−60 V
emitter-base voltage open collector −−5V
collector current (DC) −−600 mA
peak collector current −−800 mA
peak base current −−200 mA
total power dissipation T
≤ 25 °C − 500 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 250 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
collector cut-off current IE= 0; VCB= −50 V −−10 nA
= 0; VCB= −50 V; T
I
E
= 125 °C −−10 µA
amb
emitter cut-off current IC= 0; VEB= −5V −−50 nA
DC current gain IC= −0.1 mA; VCE= −10 V 75 −
= −1 mA; VCE= −10 V 100 −
I
C
= −10 mA; VCE= −10 V 100 −
I
C
I
= −150 mA; VCE= −10 V 100 300
C
= −500 mA; VCE= −10 V 50 −
I
C
collector-emitter saturation voltage IC= −150 mA; IB= −15 mA −−400 mV
= −500 mA; IB= −50 mA −−1.6 V
I
C
base-emitter saturation voltage IC= −150 mA; IB= −15 mA −−1.3 V
= −150 mA; IB= −50 mA −−2.6 V
I
C
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 8pF
emitter capacitance IC=ic= 0; VEB= −2 V; f = 1 MHz − 30 pF
transition frequency IC= −50 mA; VCE= −20 V; f = 100 MHz 200 − MHz
1997 May 05 3
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