Philips PN2369 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
PN2369; PN2369A
NPN switching transistors
Product specification
Supersedes data of 1997 May 07
1999 Apr 14
Philips Semiconductors Product specification
NPN switching transistors PN2369; PN2369A
FEATURES
• Low current (max. 200 mA)
• Low voltage (max. 15 V).
PINNING
PIN DESCRIPTION
1 collector
2 base
APPLICATIONS
3 emitter
• High-speed switching applications.
DESCRIPTION
NPN switching transistor in a TO-92; SOT54 plastic
package.
handbook, halfpage
1
2
3
2
MAM279
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 5V
collector current (DC) − 200 mA
peak collector current − 300 mA
peak base current − 100 mA
total power dissipation T
≤ 25 °C − 500 mW
amb
storage temperature −55 +150 °C
junction temperature − 150 °C
operating ambient temperature −55 +150 °C
1
3
1999 Apr 14 2
Philips Semiconductors Product specification
NPN switching transistors PN2369; PN2369A
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
f
T
Switching times (between 10% and 90% levels); (see Fig.2)
t
on
t
d
t
r
t
off
t
s
t
f
thermal resistance from junction to ambient note 1 250 K/W
collector cut-off current IE= 0; VCB=20V −−400 nA
I
= 0; VCB=20V; T
E
= 125 °C −−30 µA
amb
emitter cut-off current IC= 0; VEB=4V −−100 nA
DC current gain IC= 10 mA; VCE=1V 40 − 120
PN2369 I
DC current gain I
PN2369A I
= 10 mA; VCE=1V;
C
T
= −55 °C
amb
I
= 100 mA; VCE=2V 20 −−
C
= 10 mA; VCE= 350 mV 40 − 120
C
= 10 mA; VCE= 350 mV;
C
T
= −55 °C
amb
I
= 30 mA; VCE= 400 mV 30 −−
C
I
= 100 mA; VCE=1V 20 −−
C
20 −−
20 −−
collector-emitter saturation voltage IC= 10 mA; IB=1mA −−250 mV
PN2369
collector-emitter saturation voltage I
PN2369A I
= 10 mA; IB=1mA −−200 mV
C
= 10 mA; IB=10mA −−300 mV
C
I
= 30 mA; IB=3mA −−250 mV
C
I
= 100 mA; IB=10mA −−500 mV
C
base-emitter saturation voltage IC= 10 mA; IB=1mA 700 − 850 mV
collector capacitance IE=ie= 0; VCB= 5 V; f = 1 MHz −−4pF
transition frequency IC= 10 mA; VCE= 10 V; f = 100 MHz 500 −−MHz
turn-on time I
delay time −−4ns
I
Con
Boff
= 10 mA; I
= −1.5 mA
Bon
= 3 mA;
− 810ns
rise time −−6ns
turn-off time − 10 20 ns
storage time −−10 ns
fall time −−10 ns
1999 Apr 14 3
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