Philips PN2222A Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D186

PN2222A

NPN switching transistor

Product specification
Supersedes data of 1997 May 05

1999 May 21

Philips Semiconductors Product specification

NPN switching transistor PN2222A

FEATURES

• High current (max. 600 mA)

• Low voltage (max. 40 V).

PINNING

PIN DESCRIPTION

1 collector
2 base

APPLICATIONS

3 emitter

• General purpose switching and linear amplification.

DESCRIPTION

NPN switching transistor in a TO-92; SOT54 plastic
package. PNP complement: PN2907A.

handbook, halfpage

1

2

3

2

MAM279

Fig.1 Simplified outline (TO-92; SOT54)

and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

BM

P

tot

T

stg

T

j

T

amb

collector-base voltage open emitter − 75 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 6V
collector current (DC) − 600 mA
peak collector current − 800 mA
peak base current − 200 mA
total power dissipation T

≤ 25 °C − 500 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

1

3

1999 May 21 2

Philips Semiconductors Product specification

NPN switching transistor PN2222A

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

=25°C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

CBO

I

EBO

h

FE

V

CEsat

V

BEsat

C

c

C

e

f

T

F noise figure I

thermal resistance from junction to ambient note 1 250 K/W

collector cut-off current IE= 0; VCB=60V − 10 nA

I

= 0; VCB=60V; T

E

= 125 °C − 10 µA

amb

emitter cut-off current IC= 0; VEB=3V − 10 nA
DC current gain IC= 0.1 mA; VCE=10V 35 −

I

= 1 mA; VCE=10V 50 −

C

= 10 mA; VCE=10V 75 −

I

C

I

= 10 mA; VCE=10V; T

C

I

= 150 mA; VCE=1V 50 −

C

I

= 150 mA; VCE= 10 V 100 300

C

I

= 500 mA; VCE=10V 40 −

C

= −55 °C35−

amb

collector-emitter saturation voltage IC= 150 mA; IB=15mA − 300 mV

I

= 500 mA; IB=50mA 1 − V

C

base-emitter saturation voltage IC= 150 mA; IB= 15 mA 0.6 1.2 V

I

= 500 mA; IB=50mA − 2V

C

collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 8pF
emitter capacitance IC=ic= 0; VEB= 500 mV; f = 1 MHz − 25 pF
transition frequency IC= 20 mA; VCE= 20 V; f = 100 MHz 300 − MHz

= 100 µA; VCE=5V; RS=1kΩ;

C

− 4dB

f = 1 kHz
Switching times (between 10% and 90% levels); see Fig.2
t

on

t

d

t

r

t

off

t

s

t

f

turn-on time I
delay time − 15 ns
rise time − 20 ns
turn-off time − 250 ns
storage time − 200 ns
fall time − 60 ns

= 150 mA; I

Con

I

= −15 mA; T

Boff

1999 May 21 3

=15mA;

Bon

amb

− 35 ns

=25°C