Philips PMSTA92 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D102
PMSTA92; PMSTA93
PNP high-voltage transistors
Product specification
Supersedes data of 1996 Dec 09
1999 Jun 01
Philips Semiconductors Product specification
PNP high-voltage transistors PMSTA92; PMSTA93
FEATURES
• High voltage.
PINNING
PIN DESCRIPTION
APPLICATIONS
• High voltage switching in telephony.
DESCRIPTION
PNP transistor in a SOT323 plastic package.
handbook, halfpage
NPN complements: PMSTA42 and PMSTA43.
MARKING
TYPE NUMBER MARKING CODE
(1)
PMSTA92 ∗2D
PMSTA93 ∗2E
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1 base
2 emitter
3 collector
1
Top view
3
3
1
2
2
MAM048
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
PMSTA92 −−300 V
PMSTA93 −−200 V
V
CEO
collector-emitter voltage open base
PMSTA92 −−300 V
PMSTA93 −−200 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector −−5V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−100 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Jun 01 2
Philips Semiconductors Product specification
PNP high-voltage transistors PMSTA92; PMSTA93
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
f
T
thermal resistance from junction to ambient note 1 625 K/W
collector cut-off current
PMSTA92 I
PMSTA93 I
= 0; VCB= −200 V −−250 nA
E
= 0; VCB= −160 V −−250 nA
E
emitter cut-off current IC= 0; VEB= −3V −−100 nA
DC current gain VCE= −10 V
= −1mA 25 −
I
C
I
=−10 mA 40 −
C
I
= −30 mA 25 −
C
collector-emitter saturation voltage IC= −20 mA; IB= −2mA −−500 mV
base-emitter saturation voltage IC= −20 mA; IB= −2mA −−900 mV
collector capacitance IE=ie= 0; VCB= −20 V; f = 1 MHz
PMSTA92 − 6pF
PMSTA93 − 8pF
transition frequency IC= −10 mA; VCE= −20 V; f = 100 MHz 50 − MHz
1999 Jun 01 3
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