Philips PMEG2020AEA User Guide
查询PMEG2020AEA供应商
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, halfpage
M3D049
PMEG2020AEA
20 V, 2 A very low V
MEGA
F
SchottkybarrierrectifierinSOD323
(SC-76) package
Product specification 2004 Feb 26
Philips Semiconductors Product specification
20 V, 2 A very low VF MEGA Schottky
barrier rectifier in SOD323 (SC-76) package
FEATURES
• Forward current: 2 A
• Reverse voltage: 20 V
• Very low forward voltage
• Very small SMD package.
APPLICATIONS
• Low voltage rectification
• High efficiency DC/DC conversion
• Switch mode power supply
• Inverse polarity protection
• Low power consumption applications.
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stressprotection,encapsulatedin aSOD323 (SC-76)very
small SMD plastic package.
QUICK REFERENCE DATA
SYMBOL PARAMETER VALUE UNIT
I
F
V
R
PINNING
PMEG2020AEA
forward current 2 A
reverse voltage 20 V
PIN DESCRIPTION
1 cathode
2 anode
12
MHC682
MARKING
TYPE NUMBER MARKING CODE
PMEG2020AEA S3
RELATED PRODUCTS
TYPE NUMBER DESCRIPTION FEATURES
PMEG1020EA 2 A; 10 V ultra low VFMEGA Schottky barrier
rectifier
PMEG2010EA 1 A; 20 V ultra low VFMEGA Schottky barrier
rectifier
ORDERING INFORMATION
TYPE NUMBER
NAME DESCRIPTION VERSION
PMEG2020AEA − plastic surface mounted package; 2 leads SOD323
The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD323; SC-76) and
symbol.
SOD323 package; lower reverse voltage; lower
forward voltage
SOD323 package; lower forward current; lower
reverse current and diode capacitance
PACKAGE
2004 Feb 26 2
Philips Semiconductors Product specification
20 V, 2 A very low VF MEGA Schottky
PMEG2020AEA
barrier rectifier in SOD323 (SC-76) package
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
I
F
I
FRM
I
FSM
T
stg
T
j
T
amb
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
R
th(j-a)
R
th(j-s)
continuous reverse voltage − 20 V
continuous forward current Tsp≤ 55 °C − 2A
repetitive peak forward current tp≤ 1 ms; δ≤0.25 − 7A
non-repetitive peak forward current t = 8 ms square wave − 9A
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
thermal resistance from junction to ambient notes 1 and 2 450 K/W
thermal resistance from junction to ambient notes 2 and 3 210 K/W
thermal resistance from junction to solder point note 4 90 K/W
Notes
1. Refer to SOD323 (SC-76) standard mounting conditions.
2. ForSchottky barrierdiodes thermalrunaway hasto beconsidered, asinsome applications,the reversepower losses
PRare asignificant part of thetotal power losses.Nomograms for determination ofthe reverse power lossesPRand
IF (AV) rating will be available on request.
3. Device mounted on a on an FR4 printed-circuit board with copper clad 10 x 10 mm.
4. Soldering point of cathode tab.
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
F
forward voltage see Fig.2; note 1
IF= 0.01 A 200 220 mV
IF= 0.1 A 265 290 mV
IF= 1 A 380 430 mV
IF= 2 A 450 525 mV
I
R
reverse current VR= 5 V; see Fig.3 15 50 µA
VR= 10 V 20 80 µA
VR= 20 V 50 200 µA
C
d
diode capacitance VR= 5 V; f = 1 MHz; see Fig.4 55 70 pF
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2004 Feb 26 3
Loading...