Philips PLVA650A, PLVA656A, PLVA659A, PLVA662A, PLVA665A Datasheet

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DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
PLVA600A series
Low-voltage avalanche regulator diodes
Product specification Supersedes data of 1996 Apr 26
1999 May 25
Philips Semiconductors Product specification
Low-voltage avalanche regulator diodes PLVA600A series
FEATURES
Very low dynamic impedance at low currents: approximately1⁄20 of conventional series
Hard breakdown knee
Low noise: approximately1⁄10 of
conventional series
Total power dissipation: max. 250 mW
Small tolerances of V
Z
Working voltage range: nom. 5.0 to 6.8 V
Non-repetitive peak reverse power dissipation: max. 30 W.
APPLICATIONS
Low current, low power, low noise applications
CMOS RAM back-up circuits
Voltage stabilizers
Voltage limiters
Smoke detector relays.
DESCRIPTION
High performance voltage regulator diodes in small SOT23 plastic SMD packages.
The series consists of PLVA650A to PLVA668A.
PINNING
PIN DESCRIPTION
1 anode 2 not connected 3 cathode
handbook, halfpage
21
3
Top view
Fig.1 Simplified outline (SOT23) and symbol.
MARKING
TYPE NUMBER MARKING CODE
PLVA650A 9A PLVA653A 9B PLVA656A 9C PLVA659A 9D PLVA662A 9E PLVA665A 9F PLVA668A 9G
Note
1. = p: Made in Hong Kong.= t: Made in Malaysia.
2
n.c.
1
3
MAM243
(1)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
I
ZRM
P
ZSM
P
tot
T
stg
T
j
continuous forward current 250 mA repetitive peak working current tp= 100 µs; δ = 10% 250 mA non-repetitive peak reverse power dissipation tp= 100 µs; Tj= 150 °C30W total power dissipation T
=25°C; note 1 250 mW
amb
storage temperature 65 +150 °C junction temperature 150 °C
Note
1. Device mounted on an FR4 printed circuit-board.
1999 May 25 2
Philips Semiconductors Product specification
Low-voltage avalanche regulator diodes PLVA600A series
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
V
Z
V
Z
R
Z
S
Z
I
R
forward voltage IF=10mA −−0.9 V working voltage IZ= 250 µA
PLVA650A 4.80 5.00 5.20 V PLVA653A 5.10 5.30 5.50 V PLVA656A 5.40 5.60 5.80 V PLVA659A 5.70 5.90 6.10 V PLVA662A 6.00 6.20 6.40 V PLVA665A 6.30 6.50 6.70 V PLVA668A 6.60 6.80 7.00 V
working voltage IZ=10µA
PLVA650A 4.30 V PLVA653A 5.20 V PLVA656A 5.51 V PLVA659A 5.85 V PLVA662A 6.19 V PLVA665A 6.49 V PLVA668A 6.80 V
dynamic resistance 1 kHz superimposed;
I
is 10% of I
PLVA650A −−700
ZAC
; IZ= 250 µA
ZDC
PLVA653A −−250 PLVA656A to PLVA668A −−100
temperature coefficient IZ= 250 µA
PLVA650A 0.20 mV/K PLVA653A 1.60 mV/K PLVA656A 1.90 mV/K PLVA659A 2.40 mV/K PLVA662A 2.65 mV/K PLVA665A 2.90 mV/K PLVA668A 3.40 mV/K
reverse current VR= 80% VZnominal
PLVA650A −−20000 nA PLVA653A −−5000 nA PLVA656A −−1000 nA PLVA659A −−500 nA PLVA662A −−100 nA PLVA665A −−50 nA PLVA668A −−10 nA
1999 May 25 3
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