Philips PLVA653A Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
PLVA600A series
Low-voltage avalanche regulator
diodes
Product specification
Supersedes data of 1996 Apr 26
1999 May 25
Philips Semiconductors Product specification
Low-voltage avalanche regulator diodes PLVA600A series
FEATURES
• Very low dynamic impedance at
low currents: approximately1⁄20 of
conventional series
• Hard breakdown knee
• Low noise: approximately1⁄10 of
conventional series
• Total power dissipation:
max. 250 mW
• Small tolerances of V
Z
• Working voltage range:
nom. 5.0 to 6.8 V
• Non-repetitive peak reverse power
dissipation: max. 30 W.
APPLICATIONS
• Low current, low power, low noise
applications
• CMOS RAM back-up circuits
• Voltage stabilizers
• Voltage limiters
• Smoke detector relays.
DESCRIPTION
High performance voltage regulator
diodes in small SOT23 plastic SMD
packages.
The series consists of PLVA650A to
PLVA668A.
PINNING
PIN DESCRIPTION
1 anode
2 not connected
3 cathode
handbook, halfpage
21
3
Top view
Fig.1 Simplified outline (SOT23) and symbol.
MARKING
TYPE NUMBER MARKING CODE
PLVA650A ∗9A
PLVA653A ∗9B
PLVA656A ∗9C
PLVA659A ∗9D
PLVA662A ∗9E
PLVA665A ∗9F
PLVA668A ∗9G
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
2
n.c.
1
3
MAM243
(1)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
I
ZRM
P
ZSM
P
tot
T
stg
T
j
continuous forward current − 250 mA
repetitive peak working current tp= 100 µs; δ = 10% 250 mA
non-repetitive peak reverse power dissipation tp= 100 µs; Tj= 150 °C30W
total power dissipation T
=25°C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
Note
1. Device mounted on an FR4 printed circuit-board.
1999 May 25 2
Philips Semiconductors Product specification
Low-voltage avalanche regulator diodes PLVA600A series
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
V
Z
V
Z
R
Z
S
Z
I
R
forward voltage IF=10mA −−0.9 V
working voltage IZ= 250 µA
PLVA650A 4.80 5.00 5.20 V
PLVA653A 5.10 5.30 5.50 V
PLVA656A 5.40 5.60 5.80 V
PLVA659A 5.70 5.90 6.10 V
PLVA662A 6.00 6.20 6.40 V
PLVA665A 6.30 6.50 6.70 V
PLVA668A 6.60 6.80 7.00 V
working voltage IZ=10µA
PLVA650A − 4.30 − V
PLVA653A − 5.20 − V
PLVA656A − 5.51 − V
PLVA659A − 5.85 − V
PLVA662A − 6.19 − V
PLVA665A − 6.49 − V
PLVA668A − 6.80 − V
dynamic resistance 1 kHz superimposed;
I
is 10% of I
PLVA650A −−700 Ω
ZAC
; IZ= 250 µA
ZDC
PLVA653A −−250 Ω
PLVA656A to PLVA668A −−100 Ω
temperature coefficient IZ= 250 µA
PLVA650A − 0.20 − mV/K
PLVA653A − 1.60 − mV/K
PLVA656A − 1.90 − mV/K
PLVA659A − 2.40 − mV/K
PLVA662A − 2.65 − mV/K
PLVA665A − 2.90 − mV/K
PLVA668A − 3.40 − mV/K
reverse current VR= 80% VZnominal
PLVA650A −−20000 nA
PLVA653A −−5000 nA
PLVA656A −−1000 nA
PLVA659A −−500 nA
PLVA662A −−100 nA
PLVA665A −−50 nA
PLVA668A −−10 nA
1999 May 25 3
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