Philips PLVA2659A, PLVA2662A, PLVA2665A, PLVA2668A, PLVA2650A Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
PLVA2600A series
Low-voltage avalanche regulator
double diodes
Product specification
Supersedes data of 1996 May 06
1999 May 10
Philips Semiconductors Product specification
Low-voltage avalanche regulator double
diodes
FEATURES
• Very low dynamic impedance at
low currents: approximately1⁄20 of
conventional series
• Hard breakdown knee
• Low noise: approximately1⁄10 of
conventional series
• Total power dissipation:
max. 250 mW
• Small tolerances of V
Z
• Working voltage range:
nom. 5.0 to 6.8 V
• Non-repetitive peak reverse power
dissipation: max. 30 W.
APPLICATIONS
• Low current, low power, low noise
applications
• CMOS RAM back-up circuits
• Voltage stabilizers
• Voltage limiters
• Smoke detector relays.
MARKING
TYPE NUMBER MARKING CODE
PLVA2650A ∗9J
PLVA2653A ∗9K
PLVA2656A ∗9L
PLVA2659A ∗9M
PLVA2662A ∗9N
PLVA2665A ∗9O
PLVA2668A ∗9P
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
PIN DESCRIPTION
1 cathode (k1)
2 cathode (k2)
3 common anode
PLVA2600A series
(1)
DESCRIPTION
The PLVA2600A series consists of
two high performance voltage
regulator diodes with common
anodes, in small SOT23 plastic SMD
packages.
The series consists of PLVA2650A to
PL VA2668A.
21
21
3
Top view
Fig.1 Simplified outline (SOT23) and symbol.
3
MAM245
1999 May 10 2
Philips Semiconductors Product specification
Low-voltage avalanche regulator double
PLVA2600A series
diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
I
ZRM
P
ZSM
P
tot
T
stg
T
j
Note
1. Device mounted on an FR4 printed circuit-board.
continuous forward current − 250 mA
repetitive peak working current tp= 100 µs; δ = 10% − 250 mA
non-repetitive peak reverse power
tp= 100 µs; Tj= 150 °C − 30 W
dissipation
total power dissipation single diode loaded;
T
=25°C; note 1
amb
double diode loaded;
T
=25°C; note 1
amb
− 250 mW
− 180 mW
storage temperature −65 +150 °C
junction temperature − 150 °C
1999 May 10 3
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