Philips PLVA2656A, PLVA2659A, PLVA2662A, PLVA2665A, PLVA2668A Datasheet

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DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
PLVA2600A series
Low-voltage avalanche regulator double diodes
Product specification Supersedes data of 1999 May 10
2001 Oct 15
Philips Semiconductors Product specification
Low-voltage avalanche regulator double diodes PLVA2600A series

FEATURES

Very low dynamic impedance at low currents: approximately1⁄20 of conventional series
Hard breakdown knee
Low noise: approximately1⁄10 of
conventional series
Total power dissipation: max. 250 mW
Small tolerances of V
Z
Working voltage range: nom. 5.0 to 6.8 V
Non-repetitive peak reverse power dissipation: max. 30 W.

APPLICATIONS

Low current, low power, low noise applications
CMOS RAM back-up circuits
Voltage stabilizers
Voltage limiters
Smoke detector relays.

MARKING

TYPE NUMBER MARKING CODE
PLVA2650A 9J PLVA2653A 9K PLVA2656A 9L PLVA2659A 9M PLVA2662A 9N PLVA2665A 9O PLVA2668A 9P
Note
1. = p : Made in Hong Kong.= t : Made in Malaysia.= W: Made in China.

PINNING

PIN DESCRIPTION
1 cathode (k1) 2 cathode (k2) 3 common anode
(1)

DESCRIPTION

The PLVA2600A series consists of two high performance voltage regulator diodes with common anodes, in small SOT23 plastic SMD packages.
The seriesconsists of PLVA2650A to PLVA2668A.
21
21
3
Top view
Fig.1 Simplified outline (SOT23) and symbol.
3
MAM245
2001 Oct 15 2
Philips Semiconductors Product specification
Low-voltage avalanche regulator double diodes PLVA2600A series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
I
ZRM
P
ZSM
P
tot
T
stg
T
j
Note
1. Device mounted on an FR4 printed circuit-board.
continuous forward current 250 mA repetitive peak working current tp= 100 µs; δ = 10% 250 mA non-repetitive peak reverse power
tp= 100 µs; Tj= 150 °C 30 W
dissipation total power dissipation single diode loaded;
T
=25°C; note 1
amb
double diode loaded;
=25°C; note 1
T
amb
250 mW
180 mW
storage temperature 65 +150 °C junction temperature 150 °C
2001 Oct 15 3
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