Philips pimn31 Datasheet

PIMN31

500 mA, 50 V NPN/NPN double resistor-equipped transistor;
R1 = 1 kΩ, R2 = 10 kΩ

Rev. 01 — 19 June 2007 Product data sheet

1. Product profile

1.1 General description

500 mA, 50 V NPN/NPN double Resistor-Equipped Transistor (RET) in a small
SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

1.2 Features

n 500 mA output current capability
n Built-in bias resistors
n Simplifies circuit design
n Reduces component count
n Reduces pick and place costs
n AEC-Q101 qualified

1.3 Applications

n Digital application in automotive and industrial segments
n Switching loads

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

V

CEO

I

O

R1 bias resistor 1 (input) 0.7 1 1.3 kΩ
R2/R1 bias resistor ratio 9 10 11

collector-emitter voltage open base - - 50 V
output current - - 500 mA

NXP Semiconductors

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Symbol

1 GND (emitter) TR1
2 input (base) TR1
3 output (collector) TR2
4 GND (emitter) TR2
5 input (base) TR2
6 output (collector) TR1

PIMN31

500 mA, 50 V NPN/NPN double RET; R1 = 1 kΩ, R2 = 10 kΩ

4

56

132

65 4

R2

R1

TR1

R2 R1

TR2

3. Ordering information

Table 3. Ordering information

Type number Package

PIMN31 SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457

4. Marking

Table 4. Marking codes

Type number Marking code

PIMN31 4E

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per transistor

V

CBO

V

CEO

V

EBO

V

I

I

O

P

tot

1

23

sym063

Name Description Version

collector-base voltage open emitter - 50 V
collector-emitter voltage open base - 50 V
emitter-base voltage open collector - 5 V
input voltage

positive - +12 V

negative - −5V
output current - 500 mA
total power dissipation T

amb

≤ 25 °C

[1]

- 290 mW

PIMN31_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 19 June 2007 2 of 11

NXP Semiconductors

PIMN31

500 mA, 50 V NPN/NPN double RET; R1 = 1 kΩ, R2 = 10 kΩ

Table 5. Limiting values

…continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per device

P

tot

T

j

T

amb

T

stg

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

total power dissipation T
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C

500

P

tot

(mW)

400

300

200

amb

≤ 25 °C

[1]

- 420 mW

006aab054

FR4 PCB, standard footprint

Fig 1. Power derating curve

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

R

th(j-a)

R

th(j-sp)

Per device

R

th(j-a)

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

thermal resistance from
junction to ambient

thermal resistance from
junction to solder point

thermal resistance from
junction to ambient

100

0

−75 17512525 75−25

in free air

in free air

T

(°C)

amb

[1]

- - 431 K/W

- - 105 K/W

[1]

- - 298 K/W

PIMN31_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 19 June 2007 3 of 11

NXP Semiconductors

PIMN31

500 mA, 50 V NPN/NPN double RET; R1 = 1 kΩ, R2 = 10 kΩ

006aaa494

2

10

tp (s)

3

10

Z

th(j-a)

(K/W)

3

10

δ = 1

0.75

0.50

0.20

0.10

0.05

0.02

0.01

0

0.33

−4

10

−3

10

−2

−1

10

1

1010

2

10

10

1

−5

10

FR4 PCB, standard footprint

Fig 2. Transient thermalimpedance from junction to ambient as a function of pulse duration for SOT457 (SC-74);

typical values

7. Characteristics

Table 7. Characteristics

T

=25°C unless otherwise specified.

amb

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

I

CBO

collector-base cut-off
current

I

CEO

collector-emitter
cut-off current

I

EBO

emitter-base cut-off

current
h
V

FE

CEsat

DC current gain VCE=5V; IC=50mA 70 - -

collector-emitter

saturation voltage
V

I(off)

V

I(on)

off-state input voltage VCE=5V; IC= 100 µA 0.3 0.6 1 V

on-state input voltage VCE= 0.3 V; IC= 20 mA 0.4 0.8 1.4 V
R1 bias resistor 1 (input) 0.7 1 1.3 kΩ
R2/R1 bias resistor ratio 9 10 11
C

c

collector capacitance VCB=10V;IE=ie=0A;

VCB=50V; IE= 0 A - - 100 nA

VCE=50V; IB= 0 A - - 0.5 µA

VEB=5V; IC= 0 A - - 0.72 mA

IC= 50 mA; IB= 2.5 mA - - 0.3 V

-7-pF

f=1MHz

PIMN31_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 19 June 2007 4 of 11

NXP Semiconductors

PIMN31

500 mA, 50 V NPN/NPN double RET; R1 = 1 kΩ, R2 = 10 kΩ

10

006aaa314

2

IC (mA)

(1)
(2)
(3)

3

10

3

10

h

FE

2

10

10

1

−1

10

110

VCE=5V
(1) T
(2) T
(3) T

amb
amb
amb

= 100 °C
=25°C
= −40 °C

Fig 3. DC current gain as a function of collector

current; typical values

−1

10

V

CEsat

(V)

−2

10

110

10

006aaa315

(1)
(2)

(3)

2

10

IC (mA)

IC/IB=20
(1) T
(2) T
(3) T

amb
amb
amb

= 100 °C
=25°C
= −40 °C

Fig 4. Collector-emitter saturation voltage as a

function of collector current; typical values

3

1

V

CEsat

(V)

−1

10

−2

10

110

10

006aab055

(1)
(2)
(3)

2

10

IC (mA)

3

IC/IB=50
(1) T
(2) T
(3) T

amb
amb
amb

= 100 °C
=25°C
= −40 °C

Fig 5. Collector-emitter saturation voltage as a function of collector current; typical values

PIMN31_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 19 June 2007 5 of 11

NXP Semiconductors

PIMN31

500 mA, 50 V NPN/NPN double RET; R1 = 1 kΩ, R2 = 10 kΩ

10

006aaa316

2

IC (mA)

3

10

10

V

I(on)

(V)

1

−1

10

−1

10

(1)

(2)
(3)

110

VCE= 0.3 V
(1) T
(2) T
(3) T

amb
amb
amb

= −40 °C
=25°C
= 100 °C

Fig 6. On-state input voltageas a function of collector

current; typical values

IC (mA)

006aaa317

101

1

V

I(off)

(V)

−1

10

−1

10

(1)

(2)

(3)

VCE=5V
(1) T
(2) T
(3) T

amb
amb
amb

= −40 °C
=25°C
= 100 °C

Fig 7. Off-state input voltageas a functionof collector

current; typical values

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101(Stress qualification for discrete semiconductors) and is suitablefor
use in automotive critical applications.

PIMN31_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 19 June 2007 6 of 11

NXP Semiconductors

9. Package outline

PIMN31

500 mA, 50 V NPN/NPN double RET; R1 = 1 kΩ, R2 = 10 kΩ

Fig 8. Package outline SOT457 (SC-74)

10. Packing information

Table 8. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number Package Description Packing quantity

PIMN31 SOT457 4 mm pitch, 8 mm tape and reel; T1

3.1

2.7

56

3.0

1.7

2.5

1.3

pin 1 index

132

0.95

1.9

4 mm pitch, 8 mm tape and reel; T2

1.1

0.9

4

0.6

0.2

[1]

0.26

0.10

04-11-08Dimensions in mm

0.40

0.25

3000 10000

[2]

-115 -135

[3]

-125 -165

[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping
[3] T2: reverse taping

PIMN31_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 19 June 2007 7 of 11

NXP Semiconductors

11. Soldering

3.30

2.825

0.95

PIMN31

500 mA, 50 V NPN/NPN double RET; R1 = 1 kΩ, R2 = 10 kΩ

3.45

1.95

solder lands

solder resist

0.45 0.55
occupied area

solder paste

1.60

1.70

3.10

3.20

msc422

Dimensions in mm

Fig 9. Reflow soldering footprint SOT457 (SC-74)

5.30

5.05

1.40

4.30

Dimensions in mm

Fig 10. Wave soldering footprint SOT457 (SC-74)

0.45

1.45 4.45

msc423

solder lands
solder resist
occupied area

PIMN31_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 19 June 2007 8 of 11

NXP Semiconductors

500 mA, 50 V NPN/NPN double RET; R1 = 1 kΩ, R2 = 10 kΩ

PIMN31

12. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PIMN31_1 20070619 Product data sheet - -

PIMN31_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 19 June 2007 9 of 11

NXP Semiconductors

13. Legal information

13.1 Data sheet status

PIMN31

500 mA, 50 V NPN/NPN double RET; R1 = 1 kΩ, R2 = 10 kΩ

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] Theproduct status of device(s)described in this document may have changed since this document was published and may differin case of multiple devices.The latest product status

information is available on the Internet at URL

[1][2]

Product status

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall haveno liability for the consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title.Ashort data sheet is intended
for quick reference only and should not be relied upon tocontain detailedand
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

13.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However,NXP Semiconductors does not give any representations or
warranties, expressedor implied,as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces allinformation suppliedprior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or

[3]

http://www.nxp.com.

Definition

malfunction of a NXP Semiconductorsproductcanreasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134)maycause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyanceor implicationof any license under any copyrights, patents
or other industrial or intellectual property rights.

13.4 Trademarks

Notice: All referencedbrands, product names, service names and trademarks
are the property of their respective owners.

14. Contact information

For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]

PIMN31_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 19 June 2007 10 of 11

NXP Semiconductors

500 mA, 50 V NPN/NPN double RET; R1 = 1 kΩ, R2 = 10 kΩ

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 6

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7

10 Packing information. . . . . . . . . . . . . . . . . . . . . . 7

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

14 Contact information. . . . . . . . . . . . . . . . . . . . . 10

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

PIMN31

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2007. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

Date of release: 19 June 2007

Document identifier: PIMN31_1