2000 Feb 15 3
Philips Semiconductors Product specification
256 × 8-bit CMOS EEPROMs with
I
2
C-bus interface
PCF85102C-2; PCF85103C-2
1 FEATURES
• Low power CMOS:
– maximum operating current: 2.0 mA
– maximum standby current 10 µA (at 6.0 V),
typical 4 µA.
• Non-volatile storage of:
– 2 kbits organized as 256 × 8-bit.
• Single supply with full operation down to 2.5 V
• On-chip voltage multiplier
• Serial input/output I2C-bus
• Write operations:
– byte write mode
– 8-byte page write mode
(minimizes total write time per byte).
• Read operations:
– sequential read
– random read.
• Internal timer for writing (no external components)
• Power-on reset
• High reliability by using a redundant storage code
• Endurance: 1000000 Erase/Write (E/W) cycles at
T
amb
=22°C
• 10 years non-volatile data retention time
• Standard industrial pinning (pin 7 not connected)
• Up to sixteen EEPROMs addressable in one I2C-bus
using both PCF85102 and PCF85103 in combination.
2 GENERAL DESCRIPTION
The PCF85102C-2 andPCF85103C-2 (further referred to
as PCF8510xC-2) are 2 kbits (256 × 8-bit) floating gate
Electrically Erasable Programmable Read Only Memories
(EEPROMs). Power consumption is low due to the full
CMOS technology used. The programming voltage is
generated on-chip, using a voltage multiplier.
The PCF8510x-2 is pin compatible to widely used
industrial pinning (pin 7 not connected).
As data bytes are received and transmitted via the serial
I2C-bus, a package using eight pins is sufficient. Up to
sixteen PCF8510xC-2 devices may be connected to the
I2C-bus. This is possible with the introduction of a second
device selection code. Chip select is accomplished by
three address inputs (A0, A1 and A2) for each
PCF8510xC-2 type.
3 QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DD
supply voltage 2.5 6.0 V
I
DDR
supply current read f
SCL
= 100 kHz
V
DD
= 2.5 V − 60 µA
V
DD
= 6.0 V − 200 µA
I
DDW
supply current E/W f
SCL
= 100 kHz
V
DD
= 2.5 V − 0.6 mA
V
DD
= 6.0 V − 2.0 mA
I
DDstb
standby supply current VDD= 2.5 V − 3.5 µA
V
DD
= 6.0 V − 10 µA