Philips PCF5078T-F1, PCF5078T-F2 Datasheet

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INTEGRATED CIRCUITS

DATA SHEET

PCF5078

Power amplifier controller for GSM and PCN systems

Product specification

 

1999 Apr 12

File under Integrated Circuits, IC17

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Philips Semiconductors

Product specification

 

 

Power amplifier controller for GSM and

PCF5078

PCN systems

FEATURES

Compatible with baseband interface family PCF5073x

Two power sensor inputs

Temperature compensation of sensor signal

Active filter for DAC input

Power Amplifier (PA) protection against mismatching

Bias current source for detector diodes

Generation of pre-bias level for PA at start of burst (home position)

Possibility to adapt home position by external components

Applicable for a wide range of silicon and GaAs power amplifiers.

QUICK REFERENCE DATA

APPLICATIONS

Global System for Mobile communication (GSM)

Personal Communications Network (PCN) systems.

GENERAL DESCRIPTION

This CMOS device integrates an amplifier for the detected RF voltage from the sensor, an integrator and an active filter to build a PA control loop for cellular systems with a small amount of passive components.

SYMBOL

PARAMETER

MIN.

TYP.

MAX.

UNIT

 

 

 

 

 

 

VDD

supply voltage

2.4

3.6

5.0

V

IDD(tot)

total supply current

6

mA

Tamb

operating ambient temperature

40

+85

°C

ORDERING INFORMATION

TYPE

 

PACKAGE

 

 

 

 

NUMBER

NAME

DESCRIPTION

VERSION

 

 

 

 

 

PCF5078T

TSSOP8

plastic thin shrink small outline package; 8 leads; body width 3.0 mm

SOT505-1

 

 

 

 

1999 Apr 12

2

Philips Semiconductors

Product specification

 

 

Power amplifier controller for GSM and

PCF5078

PCN systems

BLOCK DIAGRAM

 

 

 

antenna

 

 

 

 

 

 

 

sensor

 

 

 

 

 

 

 

RF

PA

 

 

 

 

 

 

 

 

 

D1

D2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VINT

 

 

 

 

 

VS2

VS1

 

 

 

 

VC

 

 

 

4

3

S1

 

2

 

1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

C4

 

 

 

 

 

 

 

 

 

10 pF

 

S2

R2

 

 

 

 

C1

S5

R1

1 kΩ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

6 pF

 

 

20 kΩ

 

 

 

 

 

 

C2

OP1

 

 

 

 

 

 

 

 

 

OP4

VDD

 

 

 

 

PCF5078

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

6 pF

 

 

S4

S3

10 μA

 

 

 

 

 

R6

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Vprebias

 

 

 

 

 

15 kΩ

 

 

 

 

 

30 μA

30 μA

VDD

 

R4

 

 

 

 

 

 

VDD

VDD

 

 

6 kΩ

 

 

 

 

 

 

 

 

 

 

10 μA

 

 

 

 

 

 

 

R3

 

 

 

 

 

 

 

 

 

Vhome

 

 

 

 

 

 

C3

50 kΩ

 

S1 S2 S3 S4 S5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VDAC

 

CONTROL

 

 

 

 

5 pF

 

 

 

 

 

 

 

 

 

 

VDD

 

LOGIC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5

6

 

7

8

 

 

 

 

 

VSS

VDAC

VHOME

VDD

 

 

MGS193

 

 

 

 

 

 

 

 

 

AUXDAC3

 

 

 

 

 

 

 

 

PCF5073x

 

 

 

 

 

Fig.1 Block diagram.

1999 Apr 12

3

Philips Semiconductors

Product specification

 

 

Power amplifier controller for GSM and

PCF5078

PCN systems

PINNING

SYMBOL

PIN

DESCRIPTION

 

 

 

VC

1

PA control output voltage

 

 

 

VINT

2

negative integrator input

 

 

 

VS1

3

sensor signal input 1

 

 

 

VS2

4

sensor signal input 2

 

 

 

VSS

5

ground supply

VDAC

6

DAC input voltage

 

 

 

VHOME

7

home position input voltage

 

 

 

VDD

8

supply voltage

handbook, halfpage

VC

1

8

VDD

VINT

2

7

VHOME

VS1

3

PCF5078

VDAC

6

VS2

4

 

5

VSS

 

 

MGS194

 

Fig.2 Pin configuration.

FUNCTIONAL DESCRIPTION

General

The PCF5078 integrates an amplifier for the detected RF voltage from the sensor, an integrator and an active filter to build a PA control loop with a small amount of passive components.

The sensor amplifier is able to amplify signals from a RF power detector in a range of 20 to +15 dBm. This complies to the PA output power range of GSM and PCN systems when a directional coupler with 20 dB attenuation is used.

The Schottky diode for power detection (sensor) is biased by an integrated current source of 30 μA. Variations of the forward voltage of the diodes with the temperature have no influence on the measured signal, because they are cancelled by sampling around the switched capacitor operational amplifier OP1 (see Fig.1).

An external Digital-to-Analog Converter (DAC) with10-bit resolution is necessary to control the loop e.g. the AUXDAC3 of the baseband interface family PCF5073x.

An integrated active filter smooths the voltage steps of the DAC and avoids a feedthrough of the DAC harmonics into the modulation spectra of the PA.

The DAC signal and the sensor signal are added by operational amplifier OP1. The voltage difference of both signals is integrated by operational amplifier OP4, which provides the PA control voltage on pin VC. The integration is performed by means of an external capacitance CVINT connected between pins VINT and VC.

The shape of the rising and falling power burst edges can be determined by means of the DAC voltage (see Fig.3).

Power-down mode

During the not used time slots in Time Division Multiple Access (TDMA) systems, the PCF5078 must be turned off by switching off the supply voltage on pin VDD.

Initial conditions and start-up

The PCF5078 has been designed to operate in bursts as required in TDMA systems. For each time slot to be transmitted it must be powered-up by switching on the supply voltage. This allows a proper initialization of switches S1 to S5.

During start-up switches S1, S2 and S3 are closed and switches S4 and S5 are opened (see Fig.4).

The forward voltages on the Schottky diodes are sampled on capacitors C1 and C2, respectively, because switch S1 is closed. Moreover, the control voltage on pin VC is

initially forced to pre-bias level Vprebias because switches S2 and S3 are closed and switch S4 is opened.

Switch S1 is opened after a fixed time the supply voltage has been switched on and then the circuit is ready. This time is defined on-chip and can be maximum 45 μs. Once switch S1 is open, a ramp signal with a minimum amplitude of 25 mV applied on pin VDAC determines opening of switch S3 and closing of switch S4 with a delay of maximum 3 μs with respect to the start of the ramp.

After opening switch S3, the control voltage on pin VC rises in a fixed amount of time to the home position level so biasing the PA to the beginning of the active range of its control curve. Switch S2 remains closed during this typical time of 2 μs. When switch S2 is opened, switch S5 is closed allowing the transfer of any signal coming from amplifier OP1.

1999 Apr 12

4

Philips Semiconductors

Product specification

 

 

Power amplifier controller for GSM and

PCF5078

PCN systems

After this preset, the control voltage is free to increase according to the control loop if RF input is present (see Fig.3).

For higher DAC ramp steps the delay time of opening switch S3 (and closing switch S4) is reduced. On the contrary, the delay time between opening switch S2 with respect to opening switch S3 (and closing switch S4) remains unchanged.

For a correct start-up it is required that the rising time of the supply voltage is maximum 20 μs.

End of a burst

For a proper down ramp, the final value of the DAC input voltage should be below the value at the beginning of the burst and so be able to really shut-off the PA (see Fig.5). This means the code programmed for the last bit of the

DAC down ramp (CODEEND) has to be lower than the initial value of the up ramp (CODESTART). Moreover, the last code must be maintained until the supply voltage has

been switched off.

When the voltage on pin VC is detected to be lower than

VVHOME a built-in mechanism forces the voltage on pin VC to Vprebias by closing switches S1, S2 and S3 and by opening switches S4 and S5.

For proper operation, the supply voltage should be switched off at least 15 μs later with respect to the end of the down ramp on pin VDAC.

PA protection against mismatching

A second sensor amplified input is integrated into the PCF5078 for measuring the reflected wave of the directional coupler. The signal is added to the measured RF power signal (see Fig.3). When mismatching at the output of the PA occurs the power is reduced. A high Voltage Standing Wave Ratio (VSWR) at the output of the PA often occurs in systems where the PA is connected to the antenna via switches with low attenuation instead of using a duplex filter.

Home position voltage

A forward voltage of an on-chip silicon diode is provided as

the default home position voltage Vhome. This voltage matches the requirements at the control input of most PAs

and exhibits the same temperature coefficient.

However, if another value is needed for a certain PA the level can be adjusted by connecting external components to pin VHOME (see Figs 10 and 11). The home position voltage can be set between 200 and 1000 mV when using a capacitor of 50 pF connected between pins VINT

and VC.

1999 Apr 12

5

Philips PCF5078T-F1, PCF5078T-F2 Datasheet

Philips Semiconductors

Product specification

 

 

Power amplifier controller for GSM and

 

 

 

 

PCF5078

PCN systems

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RFout 0

 

 

 

 

 

 

 

 

 

 

 

(dBc) 10

 

 

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

 

 

 

30

 

 

 

 

 

 

 

 

 

 

 

40

 

 

 

 

 

 

 

 

 

 

 

50

 

 

 

 

 

 

 

 

 

 

 

60

 

 

 

 

 

 

 

 

 

 

 

70

 

 

 

 

 

 

 

 

 

 

 

80

28

 

 

18

10

0

+543

+553 +561

+571

 

time (μs)

 

 

 

 

VVDAC

 

 

 

 

 

 

 

 

 

 

 

<0.9VDD

 

 

 

 

 

 

 

 

 

 

 

CODESTART

 

 

 

 

 

 

 

 

CODEEND

 

0

2

4

6

8

10 12 14 16

16 18 20 22 24 26 28 30

32

DAC bits at 560 kHz

 

 

 

 

 

 

 

 

 

 

VVC

 

 

 

 

 

 

 

 

 

 

 

<0.9VDD

 

 

 

 

 

 

 

 

 

 

 

Vprebias

 

 

 

 

 

 

 

 

 

 

 

0

2

4

6

8

10 12 14 16

16 18 20 22 24 26 28 30

32

DAC bits at 560 kHz

 

 

 

 

 

 

 

 

 

 

VDD

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

time

RFin

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

time

>45 μs

 

 

 

 

 

 

 

 

>15 μs

MGS197

Fig.3 Timing diagram.

1999 Apr 12

6

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