Philips PBYR740, PBYR745 Datasheet
Philips Semiconductors Product specification
Rectifier diodes PBYR745 series
Schottky barrier
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching V
• Reverse surge capability
• High thermal cycling performance I
k a
12
• Low thermal resistance
GENERAL DESCRIPTION PINNING SOD59 (TO220AC)
= 40 V/ 45 V
R
= 7.5 A
F(AV)
VF ≤ 0.57 V
Schottky rectifierdiodesin aplastic PIN DESCRIPTION
envelope. Intended for use as
tab
output rectifiersin low voltage, high 1 cathode
frequency switched mode power
supplies. 2 anode
The PBYR745 series is supplied in tab cathode
the conventional leaded SOD59
(TO220AC) package.
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
PBYR7 40 45
V
V
V
I
F(AV)
I
FRM
I
FSM
I
RRM
T
T
RRM
RWM
R
j
stg
Peak repetitive reverse - 40 45 V
voltage
Working peak reverse - 40 45 V
voltage
Continuous reverse voltage Tmb ≤ 114 ˚C - 40 45 V
Average rectified forward square wave; δ = 0.5; Tmb ≤ 136 ˚C - 7.5 A
current
Repetitive peak forward square wave; δ = 0.5; Tmb ≤ 136 ˚C - 15 A
current
Non-repetitive peak forward t = 10 ms - 135 A
current t = 8.3 ms - 150 A
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied V
RRM(max)
Peak repetitive reverse pulse width and repetition rate - 1 A
surge current limited by T
Operating junction - 150 ˚C
j max
temperature
Storage temperature - 65 175 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
November 1998 1 Rev 1.300
Thermal resistance junction - - 3 K/W
to mounting base
Thermal resistance junction in free air - 60 - K/W
to ambient
Philips Semiconductors Product specification
Rectifier diodes PBYR745 series
Schottky barrier
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
C
d
Forward voltage IF = 7.5 A; Tj = 125˚C - 0.45 0.57 V
IF = 15 A; Tj = 125˚C - 0.65 0.72 V
IF = 15 A - 0.64 0.84 V
Reverse current VR = V
Junction capacitance VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 270 - pF
VR = V
RWM
; Tj = 100˚C - 17 22 mA
RWM
- 0.13 1 mA
November 1998 2 Rev 1.300
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