Philips PBYR740, PBYR745 Datasheet

Philips Semiconductors Product specification
Rectifier diodes PBYR745 series Schottky barrier
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching V
• High thermal cycling performance I
k a 12
• Low thermal resistance
GENERAL DESCRIPTION PINNING SOD59 (TO220AC)
= 40 V/ 45 V
R
= 7.5 A
F(AV)
VF 0.57 V
Schottky rectifierdiodesin aplastic PIN DESCRIPTION envelope. Intended for use as
tab
output rectifiersin low voltage, high 1 cathode frequency switched mode power supplies. 2 anode
The PBYR745 series is supplied in tab cathode the conventional leaded SOD59 (TO220AC) package.
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
PBYR7 40 45
V V V
I
F(AV)
I
FRM
I
FSM
I
RRM
T T
RRM
RWM
R
j
stg
Peak repetitive reverse - 40 45 V voltage Working peak reverse - 40 45 V voltage Continuous reverse voltage Tmb 114 ˚C - 40 45 V
Average rectified forward square wave; δ = 0.5; Tmb 136 ˚C - 7.5 A current Repetitive peak forward square wave; δ = 0.5; Tmb 136 ˚C - 15 A current Non-repetitive peak forward t = 10 ms - 135 A current t = 8.3 ms - 150 A
sinusoidal; Tj = 125 ˚C prior to surge; with reapplied V
RRM(max)
Peak repetitive reverse pulse width and repetition rate - 1 A surge current limited by T Operating junction - 150 ˚C
j max
temperature Storage temperature - 65 175 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
November 1998 1 Rev 1.300
Thermal resistance junction - - 3 K/W to mounting base Thermal resistance junction in free air - 60 - K/W to ambient
Philips Semiconductors Product specification
Rectifier diodes PBYR745 series Schottky barrier
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
C
d
Forward voltage IF = 7.5 A; Tj = 125˚C - 0.45 0.57 V
IF = 15 A; Tj = 125˚C - 0.65 0.72 V IF = 15 A - 0.64 0.84 V
Reverse current VR = V Junction capacitance VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 270 - pF
VR = V
RWM
; Tj = 100˚C - 17 22 mA
RWM
- 0.13 1 mA
November 1998 2 Rev 1.300
Loading...
+ 3 hidden pages