Philips PBYR735, PBYR740, PBYR745 Datasheet
Philips Semiconductors Product specification
Rectifier diodes PBYR745 series
Schottky barrier
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching V
R
= 40 V/ 45 V
• Reverse surge capability
• High thermal cycling performance I
F(AV)
= 7.5 A
• Low thermal resistance
VF ≤ 0.57 V
GENERAL DESCRIPTION PINNING SOD59 (TO220AC)
Schottky rectifierdiodesin aplastic PIN DESCRIPTION
envelope. Intended for use as
output rectifiersin low voltage, high 1 cathode
frequency switched mode power
supplies. 2 anode
The PBYR745 series is supplied in tab cathode
the conventional leaded SOD59
(TO220AC) package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
PBYR7 40 45
V
RRM
Peak repetitive reverse - 40 45 V
voltage
V
RWM
Working peak reverse - 40 45 V
voltage
V
R
Continuous reverse voltage Tmb ≤ 114 ˚C - 40 45 V
I
F(AV)
Average rectified forward square wave; δ = 0.5; Tmb ≤ 136 ˚C - 7.5 A
current
I
FRM
Repetitive peak forward square wave; δ = 0.5; Tmb ≤ 136 ˚C - 15 A
current
I
FSM
Non-repetitive peak forward t = 10 ms - 135 A
current t = 8.3 ms - 150 A
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse pulse width and repetition rate - 1 A
surge current limited by T
j max
T
j
Operating junction - 150 ˚C
temperature
T
stg
Storage temperature - 65 175 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction - - 3 K/W
to mounting base
R
th j-a
Thermal resistance junction in free air - 60 - K/W
to ambient
k a
12
1
tab
2
November 1998 1 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes PBYR745 series
Schottky barrier
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
Forward voltage IF = 7.5 A; Tj = 125˚C - 0.45 0.57 V
IF = 15 A; Tj = 125˚C - 0.65 0.72 V
IF = 15 A - 0.64 0.84 V
I
R
Reverse current VR = V
RWM
- 0.13 1 mA
VR = V
RWM
; Tj = 100˚C - 17 22 mA
C
d
Junction capacitance VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 270 - pF
November 1998 2 Rev 1.300
Loading...