Philips Semiconductors Product specification
Rectifier diodes |
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PBYR725D series |
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Schottky barrier |
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FEATURES |
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SYMBOL |
QUICK REFERENCE DATA |
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• Low forward volt drop |
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VR = 20 V/ 25 V |
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• Fast switching |
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k |
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a |
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• Reverse surge capability |
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IF(AV) = 7.5 A |
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• High thermal cycling performance |
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tab |
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3 |
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• Low thermal resistance |
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VF ≤ 0.4 V |
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GENERAL DESCRIPTION |
PINNING |
SOT428 |
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Schottky rectifier diodes intended |
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PIN |
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DESCRIPTION |
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tab |
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for use as output rectifiers in low |
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voltage, |
high frequency switched |
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1 |
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no connection |
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mode power supplies. |
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2 |
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cathode1 |
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The PBYR725D series is supplied |
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in the SOT428 surface mounting |
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3 |
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anode |
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package. |
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tab |
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cathode |
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2 |
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1 |
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3 |
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LIMITING VALUES |
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Limiting values in accordance with the Absolute Maximum System (IEC 134) |
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SYMBOL |
PARAMETER |
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CONDITIONS |
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MIN. |
MAX. |
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UNIT |
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PBYR7 |
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20D |
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25D |
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VRRM |
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Peak repetitive reverse |
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20 |
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25 |
V |
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voltage |
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VRWM |
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Working peak reverse |
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20 |
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25 |
V |
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voltage |
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Tmb ≤ 119 ˚C |
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VR |
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Continuous reverse voltage |
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20 |
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25 |
V |
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IF(AV) |
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Average rectified forward |
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square wave; δ = 0.5; Tmb ≤ 138 ˚C |
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7.5 |
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A |
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current |
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square wave; δ = 0.5; Tmb ≤ 138 ˚C |
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IFRM |
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Repetitive peak forward |
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15 |
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A |
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current |
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IFSM |
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Non-repetitive peak forward |
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t = 10 ms |
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100 |
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A |
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current |
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t = 8.3 ms |
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110 |
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A |
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sinusoidal; Tj = 125 ˚C prior to |
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IRRM |
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surge; with reapplied VRRM(max) |
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Peak repetitive reverse |
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pulse width and repetition rate |
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1 |
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A |
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Tj |
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surge current |
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limited by Tj max |
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Operating junction |
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150 |
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˚C |
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temperature |
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Tstg |
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Storage temperature |
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- 65 |
175 |
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˚C |
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1 it is not possible to make connection to pin 2 of the SOT428 package
February 1998 |
1 |
Rev 1.000 |
Philips Semiconductors Product specification
Rectifier diodes |
|
PBYR725D series |
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Schottky barrier |
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THERMAL RESISTANCES |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Rth j-mb |
Thermal resistance junction |
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to mounting base |
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Rth j-a |
Thermal resistance junction |
pcb mounted, minimum footprint, FR4 |
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to ambient |
board |
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3 |
K/W |
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50 |
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K/W |
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ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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VF |
Forward voltage |
IF = 7.5 A; Tj = 125˚C |
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0.33 |
0.4 |
V |
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IF = 15 |
A; Tj = 125˚C |
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0.45 |
0.52 |
V |
IR |
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IF = 15 |
A |
- |
0.52 |
0.62 |
V |
Reverse current |
VR = VRWM |
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0.2 |
5 |
mA |
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Cd |
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VR = VRWM; Tj = 100˚C |
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15 |
30 |
mA |
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Junction capacitance |
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C |
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580 |
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pF |
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February 1998 |
2 |
Rev 1.000 |
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