Philips PBYR7025WT, PBYR7020WT Datasheet

Philips Semiconductors Objective specification

	Rectifier diodes					PBYR7025WT series
	schottky barrier
	FEATURES			SYMBOL		QUICK REFERENCE DATA
	• Low forward volt drop					VR = 20 V / 25 V
	• Fast switching			a1	a2
	• Reverse surge capability
				1	3	IO(AV) = 70 A
	• High thermal cycling performance
	• Low thermal resistance					VF ≤ 0.46 V
					k 2
	GENERAL DESCRIPTION			PINNING		SOT429 (TO247)
	Dual,	common cathode schottky		PIN	DESCRIPTION
	rectifier diodes in a plastic
	envelope. Intended for use as			1	anode 1 (a)
	output rectifiers in low voltage, high
	frequency switched		mode power	2	cathode (k)
	supplies.			3	anode 2 (a)
	The	PBYR7025WT	series is
	supplied in the conventional leaded			tab	cathode	1	2	3
	SOT429 (TO247) package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS		MIN.		MAX.		UNIT
					-20		-25
VRRM	Repetitive peak reverse voltage			-	20		25	V
VRWM	Crest working reverse voltage	Tmb ≤ 104 ˚C		-	20		25	V
VR	Continuous reverse voltage			-	20		25	V
IO(AV)	Average output current (both	square wave; δ = 0.5;		-		70		A
	diodes conducting)	Tmb ≤	122 ˚C
IFRM	Repetitive peak forward current	t = 25	μs; δ = 0.5;	-		70		A
IFSM	per diode	Tmb ≤	122 ˚C
	Non-repetitive peak forward	t = 10 ms		-		500		A
	current, per diode	t = 8.3 ms		-		550		A
		sinusoidal Tj = 125 ˚C prior
		to surge; with reapplied
IRRM		VRRM(max)
	Repetitive peak reverse current	tp = 2	μs; δ = 0.001	-		2		A
	per diode	tp = 100 μs
IRSM	Non-repetitive peak reverse			-		2		A
	current per diode
Tstg	Storage temperature			-65		175		˚C
Tj	Operating junction temperature			-		150		˚C

THERMAL RESISTANCES

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
Rth j-mb	Thermal resistance junction to	per diode	-	-	1.0	K/W
	mounting base	both diodes	-	-	0.85	K/W
Rth j-a	Thermal resistance junction to	in free air	-	45	-	K/W
	ambient

November 1998

1

Rev 1.100

Philips Semiconductors Objective specification

Rectifier diodes				PBYR7025WT series
schottky barrier
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL	PARAMETER	CONDITIONS		MIN.	TYP.	MAX.	UNIT
VF	Forward voltage (per diode)	IF = 35	A; Tj = 125˚C	-	0.40	0.46	V
		IF = 70	A; Tj = 125˚C	-	0.50	0.54	V
		IF = 70	A	-	0.60	0.64	V
IR	Reverse current (per diode)	VR = VRRM		-	3.0	15	mA
Cd		VR = VRRM; Tj = 100 ˚C		-	45	120	mA
	Junction capacitance (per	f = 1MHz; VR = 5V; Tj = 25 ˚C to		-	1400	-	pF
	diode)	125 ˚C

November 1998

2

Rev 1.100