Philips PBYR7020WT, PBYR7025WT Datasheet
Philips Semiconductors Product specification
Rectifier diodes PBYR7025WT series
Schottky barrier
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching V
• Reverse surge capability
• High thermal cycling performance I
a1
13
a2
• Low thermal resistance
k
2
GENERAL DESCRIPTION PINNING SOT429 (TO247)
Dual, common cathode schottky PIN DESCRIPTION
rectifier diodes in a plastic
envelope. Intended for use as 1 anode 1 (a)
output rectifiersin low voltage, high
frequency switched mode power 2 cathode (k)
supplies.
The PBYR7025WT series is
suppliedintheconventionalleaded tab cathode
SOT429 (TO247) package.
3 anode 2 (a)
= 20 V / 25 V
R
= 70 A
O(AV)
VF ≤ 0.46 V
2
3
1
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-20 -25
V
V
V
I
O(AV)
I
FRM
I
FSM
RRM
RWM
R
Repetitive peak reverse voltage - 20 25 V
Crest working reverse voltage - 20 25 V
Continuous reverse voltage Tmb ≤ 116 ˚C - 20 25 V
Average output current (both square wave; δ = 0.5; - 70 A
diodes conducting) Tmb ≤ 114 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5; - 70 A
per diode Tmb ≤ 114 ˚C
Non-repetitive peak forward t = 10 ms - 500 A
current, per diode t = 8.3 ms - 550 A
sinusoidal Tj = 125 ˚C prior
to surge; with reapplied
V
I
RRM
I
RSM
T
T
stg
j
Repetitive peak reverse current tp = 2 µs; δ = 0.001 - 2 A
per diode
Non-repetitive peak reverse tp = 100 µs-2A
current per diode
Storage temperature -65 150 ˚C
Operating junction temperature - 150 ˚C
RRM(max)
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
R
th j-mb
th j-a
Thermal resistance junction to per diode - - 0.9 K/W
mounting base both diodes - - 0.65 K/W
Thermal resistance junction to in free air - 45 - K/W
ambient
December 1998 1 Rev 1.000
Philips Semiconductors Product specification
Rectifier diodes PBYR7025WT series
Schottky barrier
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
C
d
Forward voltage (per diode) IF = 35 A; Tj = 125˚C - 0.40 0.46 V
IF = 70 A; Tj = 125˚C - 0.52 0.54 V
IF = 70 A - 0.58 0.64 V
Reverse current (per diode) VR = V
Junction capacitance (per f = 1MHz; VR = 5V; Tj = 25 ˚C to - 2100 - pF
VR = V
RRM
; Tj = 100 ˚C - 40 120 mA
RRM
- 0.8 15 mA
diode) 125 ˚C
December 1998 2 Rev 1.000
Loading...