Philips PBYR635CT, PBYR635CTD, PBYR640CTD, PBYR645CT, PBYR645CTD Datasheet
Philips Semiconductors Product specification
Rectifier diodes PBYR645CT series
Schottky barrier
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching V
R
= 35 V/ 40 V/ 45 V
• Reverse surge capability
• High thermal cycling performance I
O(AV)
= 10 A
• Low thermal resistance
VF ≤ 0.6V
GENERAL DESCRIPTION PINNING SOT82
Dual, common cathode schottky PIN DESCRIPTION
rectifier diodes in a plastic
envelope. Intended for use as 1 anode 1
output rectifiersin low voltage, high
frequency switched mode power 2 cathode
supplies.
3 anode 2
ThePBYR645CTseriesissupplied
in the conventional leaded SOT82 tab cathode
package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
PBYR6 35CT 40CT 45CT
V
RRM
Peak repetitive reverse - 35 40 45 V
voltage
V
RWM
Working peak reverse - 35 40 45 V
voltage
V
R
Continuous reverse voltage Tmb ≤ 100 ˚C - 35 40 45 V
I
O(AV)
Average rectified output square wave; δ = 0.5; Tmb ≤ 119 ˚C - 10 A
current (both diodes
conducting)
I
FRM
Repetitive peak forward square wave; δ = 0.5; Tmb ≤ 119 ˚C - 10 A
current per diode
I
FSM
Non-repetitive peak forward t = 10 ms - 75 A
current diode t = 8.3 ms - 82 A
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse pulse width and repetition rate - 1 A
surge current per diode limited by T
j max
T
j
Operating junction - 150 ˚C
temperature
T
stg
Storage temperature - 65 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction per diode - - 5 K/W
to mounting base both diodes - - 4 K/W
R
th j-a
Thermal resistance junction in free air - 100 - K/W
to ambient
k
a1
a2
13
2
1
23
May 1998 1 Rev 1.200
Philips Semiconductors Product specification
Rectifier diodes PBYR645CT series
Schottky barrier
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
Forward voltage IF = 5 A; Tj = 125˚C - 0.51 0.6 V
IF = 10 A - 0.72 0.87 V
I
R
Reverse current VR = V
RWM
- 0.12 0.5 mA
VR = V
RWM
; Tj = 100˚C - 10 15 mA
C
d
Junction capacitance VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 150 - pF
May 1998 2 Rev 1.200
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