Philips PBYR4040WT, PBYR4045WT Datasheet
Philips Semiconductors Preliminary specification
Rectifier diodes PBYR4045WT series
Schottky barrier
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching V
• Reverse surge capability
• High thermal cycling performance I
a1
13
a2
• Low thermal resistance
k
2
GENERAL DESCRIPTION PINNING SOT429 (TO247)
Dual, common cathode schottky PIN DESCRIPTION
rectifier diodes in a plastic
envelope. Intended for use as 1 anode 1 (a)
output rectifiersin low voltage, high
frequency switched mode power 2 cathode (k)
supplies.
The PBYR4045WT series is
suppliedintheconventionalleaded tab cathode
SOT429 (TO247) package.
3 anode 2 (a)
= 40 V/ 45 V
R
= 40 A
F(AV)
VF ≤ 0.6 V
2
3
1
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
PBYR40 40WT 45WT
V
RRM
Peak repetitive reverse - 40 45 V
voltage
V
V
I
F(AV)
I
FRM
I
FSM
RWM
R
Working peak reverse - 40 45 V
voltage
Continuous reverse voltage Tmb ≤ 109 ˚C - 40 45 V
Average rectified forward square wave; δ = 0.5; Tmb ≤ 125 ˚C - 40 A
current
Repetitive peak forward square wave; δ = 0.5; Tmb ≤ 125 ˚C - 40 A
current
Non-repetitive peak forward t = 10 ms - 180 A
current t = 8.3 ms - 200 A
sinusoidal; Tj = 125 ˚C prior to
I
RRM
T
surge; with reapplied V
Peak repetitive reverse pulse width and repetition rate - 2 A
surge current limited by T
j
Operating junction - 150 ˚C
j max
RRM(max)
temperature
T
stg
Storage temperature - 65 175 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
R
th j-mb
th j-a
Thermal resistance junction per diode - - 1 K/W
to mounting base both diodes - - 0.85 K/W
Thermal resistance junction in free air - 45 - K/W
to ambient
November 1998 1 Rev 1.200
Philips Semiconductors Preliminary specification
Rectifier diodes PBYR4045WT series
Schottky barrier
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
C
d
Forward voltage per diode IF = 20 A; Tj = 125˚C - 0.57 0.6 V
IF = 40 A; Tj = 125˚C - 0.72 0.75 V
IF = 20 A - 0.67 0.7 V
IF = 40 A - 0.77 0.8 V
Reverse current per diode VR = V
VR = V
RWM
; Tj = 100˚C - 12 50 mA
RWM
- 0.5 2 mA
Junction capacitance VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 1000 - pF
November 1998 2 Rev 1.200
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