Philips Semiconductors Product specification
Rectifier diodes |
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PBYR4045WT series |
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Schottky barrier |
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FEATURES |
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SYMBOL |
QUICK REFERENCE DATA |
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• Low forward volt drop |
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VR = 40 V/ 45 V |
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• Fast switching |
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a1 |
a2 |
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• Reverse surge capability |
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3 |
IF(AV) = 40 A |
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• High thermal cycling performance |
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• Low thermal resistance |
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VF ≤ 0.58 V |
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k 2 |
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GENERAL DESCRIPTION |
PINNING |
SOT429 (TO247) |
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Dual, |
common cathode schottky |
PIN |
DESCRIPTION |
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rectifier diodes in a plastic |
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envelope. Intended for use as |
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anode 1 (a) |
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output rectifiers in low voltage, high |
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frequency switched |
mode power |
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cathode (k) |
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supplies. |
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anode 2 (a) |
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The |
PBYR4045WT |
series is |
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supplied in the conventional leaded |
tab |
cathode |
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2 |
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SOT429 (TO247) package. |
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LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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PBYR40 |
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40WT |
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45WT |
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VRRM |
Peak repetitive reverse |
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- |
40 |
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45 |
V |
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voltage |
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VRWM |
Working peak reverse |
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40 |
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45 |
V |
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voltage |
Tmb ≤ 107 ˚C |
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VR |
Continuous reverse voltage |
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40 |
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45 |
V |
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IO(AV) |
Average output current (both |
square wave; δ = 0.5; Tmb ≤ 120 ˚C |
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40 |
A |
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diodes conducting) |
square wave; δ = 0.5; Tmb ≤ 120 ˚C |
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IFRM |
Repetitive peak forward |
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40 |
A |
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current |
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IFSM |
Non-repetitive peak forward |
t = 10 ms |
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300 |
A |
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current |
t = 8.3 ms |
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325 |
A |
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sinusoidal; Tj = 125 ˚C prior to |
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surge; with reapplied VRRM(max) |
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IRRM |
Peak repetitive reverse |
pulse width and repetition rate |
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2 |
A |
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Tj |
surge current |
limited by Tj max |
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Operating junction |
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150 |
˚C |
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temperature |
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Tstg |
Storage temperature |
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- 65 |
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150 |
˚C |
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THERMAL RESISTANCES
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
Rth j-mb |
Thermal resistance junction |
per diode |
- |
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1.4 |
K/W |
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to mounting base |
both diodes |
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1 |
K/W |
Rth j-a |
Thermal resistance junction |
in free air |
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45 |
- |
K/W |
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to ambient |
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December 1998 |
1 |
Rev 1.000 |
Philips Semiconductors Product specification
Rectifier diodes |
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PBYR4045WT series |
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Schottky barrier |
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ELECTRICAL CHARACTERISTICS |
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Tj = 25 ˚C unless otherwise specified |
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SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
TYP. |
MAX. |
UNIT |
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VF |
Forward voltage per diode |
IF = 20 A; Tj = 125˚C |
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0.5 |
0.58 |
V |
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IF = 40 A; Tj = 125˚C |
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0.68 |
0.75 |
V |
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IF = 20 A |
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0.51 |
0.6 |
V |
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IR |
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IF = 40 A |
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0.67 |
0.76 |
V |
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Reverse current per diode |
VR = VRWM |
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0.4 |
2.5 |
mA |
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VR = VRWM; Tj = 100˚C |
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25 |
70 |
mA |
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Cd |
Junction capacitance |
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C |
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700 |
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pF |
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December 1998 |
2 |
Rev 1.000 |
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