Philips Semiconductors Product specification
Rectifier diodes |
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PBYR325CTD series |
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Schottky barrier |
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FEATURES |
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SYMBOL |
QUICK REFERENCE DATA |
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• Low forward volt drop |
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VR = 20 V/ 25 V |
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• Fast switching |
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a1 |
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a2 |
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• Reverse surge capability |
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1 |
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3 |
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IO(AV) = 3 A |
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• High thermal cycling performance |
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• Low thermal resistance |
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VF ≤ 0.4 V |
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k |
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2 |
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GENERAL DESCRIPTION |
PINNING |
SOT428 |
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Dual |
schottky rectifier diodes |
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PIN |
DESCRIPTION |
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tab |
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intended for use as output rectifiers |
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in low voltage, high frequency |
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1 |
anode 1 |
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switched mode power supplies. |
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2 |
cathode1 |
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The |
PBYR325CTD series is |
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supplied in the SOT428 surface |
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3 |
anode 2 |
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mounting package. |
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tab |
cathode |
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2 |
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1 |
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3 |
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LIMITING VALUES |
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Limiting values in accordance with the Absolute Maximum System (IEC 134) |
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SYMBOL |
PARAMETER |
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CONDITIONS |
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MIN. |
MAX. |
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UNIT |
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PBYR3 |
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20CTD |
25CTD |
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VRRM |
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Peak repetitive reverse |
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- |
20 |
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25 |
V |
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voltage |
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VRWM |
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Working peak reverse |
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20 |
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25 |
V |
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voltage |
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Tmb ≤ 125 ˚C |
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VR |
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Continuous reverse voltage |
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20 |
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25 |
V |
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IO(AV) |
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Average rectified output |
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square wave; δ = 0.5; Tmb ≤ 144 ˚C |
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3 |
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A |
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current (both diodes |
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conducting) |
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square wave; δ = 0.5; Tmb ≤ 144 ˚C |
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IFRM |
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Repetitive peak forward |
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3 |
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A |
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current per diode |
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IFSM |
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Non-repetitive peak forward |
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t = 10 ms |
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55 |
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A |
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current per diode |
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t = 8.3 ms |
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60 |
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A |
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sinusoidal; Tj = 125 ˚C prior to |
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surge; with reapplied VRRM(max) |
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IRRM |
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Peak repetitive reverse |
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pulse width and repetition rate |
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1 |
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A |
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Tj |
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surge current per diode |
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limited by Tj max |
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Operating junction |
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150 |
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˚C |
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temperature |
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Tstg |
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Storage temperature |
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- 65 |
175 |
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˚C |
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1 it is not possible to make connection to pin 2 of the SOT428 package
February 1998 |
1 |
Rev 1.000 |
Philips Semiconductors Product specification
Rectifier diodes |
|
PBYR325CTD series |
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|||||
Schottky barrier |
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THERMAL RESISTANCES |
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SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
TYP. |
MAX. |
UNIT |
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Rth j-mb
Rth j-a
Thermal resistance junction |
per diode |
to mounting base |
both diodes |
Thermal resistance junction |
pcb mounted, minimum footprint, FR4 |
to ambient |
board |
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5 |
K/W |
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- |
4 |
K/W |
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50 |
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K/W |
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ELECTRICAL CHARACTERISTICS
All characteristics are per diode at Tj = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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VF |
Forward voltage |
IF = 1.5 A; Tj = 125˚C |
- |
0.34 |
0.4 |
V |
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IF = 3 |
A; Tj = 125˚C |
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0.39 |
0.5 |
V |
IR |
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IF = 3 |
A |
- |
0.47 |
0.6 |
V |
Reverse current |
VR = VRWM |
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0.05 |
2 |
mA |
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Cd |
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VR = VRWM; Tj = 100˚C |
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4 |
8 |
mA |
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Junction capacitance |
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C |
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117 |
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pF |
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February 1998 |
2 |
Rev 1.000 |
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