Philips PBYR325CTD, PBYR320CTD Datasheet

Philips Semiconductors Product specification
Rectifier diodes PBYR325CTD series Schottky barrier
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching V
• High thermal cycling performance I
a1
13
a2
• Low thermal resistance
k
2
GENERAL DESCRIPTION PINNING SOT428
= 20 V/ 25 V
R
= 3 A
O(AV)
VF 0.4 V
Dual schottky rectifier diodes PIN DESCRIPTION
tab
intended foruse as output rectifiers in low voltage, high frequency 1 anode 1 switched mode power supplies.
2 cathode
1
The PBYR325CTD series is supplied in the SOT428 surface 3 anode 2 mounting package.
2
tab cathode
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V V V
I
O(AV)
I
FRM
I
FSM
I
RRM
T T
RRM
RWM
R
j
stg
Peak repetitive reverse - 20 25 V voltage Working peak reverse - 20 25 V voltage Continuous reverse voltage Tmb 125 ˚C - 20 25 V
Average rectified output square wave; δ = 0.5; Tmb 144 ˚C - 3 A current (both diodes conducting) Repetitive peak forward square wave; δ = 0.5; Tmb 144 ˚C - 3 A current per diode Non-repetitive peak forward t = 10 ms - 55 A current per diode t = 8.3 ms - 60 A
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied V Peak repetitive reverse pulse width and repetition rate - 1 A surge current per diode limited by T Operating junction - 150 ˚C
j max
temperature Storage temperature - 65 175 ˚C
PBYR3 20CTD 25CTD
RRM(max)
1 it is not possible to make connection to pin 2 of the SOT428 package
February 1998 1 Rev 1.000
Philips Semiconductors Product specification
Rectifier diodes PBYR325CTD series Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
ELECTRICAL CHARACTERISTICS
All characteristics are per diode at Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
C
d
Thermal resistance junction per diode - - 5 K/W to mounting base both diodes - - 4 K/W Thermal resistance junction pcb mounted, minimum footprint, FR4 - 50 - K/W to ambient board
Forward voltage IF = 1.5 A; Tj = 125˚C - 0.34 0.4 V
IF = 3 A; Tj = 125˚C - 0.39 0.5 V
IF = 3 A - 0.47 0.6 V Reverse current VR = V
Junction capacitance VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 117 - pF
VR = V
RWM
; Tj = 100˚C - 4 8 mA
RWM
- 0.05 2 mA
February 1998 2 Rev 1.000
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