Philips PBYR3060WT, PBYR3080WT Datasheet
Philips Semiconductors Product specification
Rectifier diodes PBYR30100WT series
Schottky barrier
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching V
• Reverse surge capability
• High thermal cycling performance I
a1
13
a2
• Low thermal resistance
k
2
GENERAL DESCRIPTION PINNING SOT429 (TO247)
Schottky rectifierdiodesin aplastic PIN DESCRIPTION
envelope. Intended for use as
output rectifiersin low voltage, high 1 anode 1
frequency switched mode power
supplies. 2 cathode
The PBYR30100WT series is 3 anode 2
suppliedintheconventionalleaded
SOT429 (TO247) package. mounting cathode
base
= 60 V/ 80 V/ 100 V
R
= 30 A
O(AV)
VF ≤ 0.7 V
2
3
1
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
PBYR30 60WT 80WT 100WT
V
V
V
I
O(AV)
RRM
RWM
R
Peak repetitive reverse - 60 80 100 V
voltage
Working peak reverse - 60 80 100 V
voltage
Continuous reverse voltage Tmb ≤ 139 ˚C - 60 80 100 V
Average rectified output square wave; δ = 0.5; - 30 A
current (both diodes Tmb ≤ 124 ˚C
conducting)
I
I
FRM
FSM
Repetitive peak forward square wave; δ = 0.5; - 30 A
current per diode Tmb ≤ 124 ˚C
Non-repetitive peak forward t = 10 ms - 180 A
current per diode t = 8.3 ms - 200 A
sinusoidal; Tj = 125 ˚C prior to
I
RRM
T
surge; with reapplied V
Peak repetitive reverse pulse width and repetition rate - 1 A
surge current per diode limited by T
j
Operating junction - 150 ˚C
j max
RRM(max)
temperature
T
stg
Storage temperature - 65 175 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
R
th j-mb
th j-a
Thermal resistance junction per diode - - 1.4 K/W
to mounting base both diodes - - 1 K/W
Thermal resistance junction in free air - 45 - K/W
to ambient
November 1998 1 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes PBYR30100WT series
Schottky barrier
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
C
d
Forward voltage IF = 15 A; Tj = 125˚C - 0.61 0.7 V
IF = 30 A; Tj = 125˚C - 0.74 0.85 V
IF = 15 A - 0.77 0.85 V
Reverse current VR = V
Junction capacitance VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 600 - pF
VR = V
RWM
; Tj = 125˚C - 5 15 mA
RWM
- 5 150 µA
November 1998 2 Rev 1.300
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