Philips PBYR3045WT, PBYR3040WT Datasheet
Philips Semiconductors Product specification
Rectifier diodes PBYR3045WT series
Schottky barrier
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop V
• Fast switching
• Reverse surge capability I
• High thermal cycling performance
a1
13
a2
• Low thermal resistance I
k
2
= 40 V/ 45 V
R
= 30 A
O(AV)
= 300 A
FSM
VF ≤ 0.6 V
GENERAL DESCRIPTION PINNING SOT429 (TO247)
Dual, common cathode schottky PIN DESCRIPTION
rectifier diodes in a plastic
envelope. Intended for use as 1 anode 1 (a)
output rectifiersin low voltage, high
frequency switched mode power 2 cathode (k)
supplies.
3 anode 2 (a)
The PBYR3045WT series is
suppliedintheconventionalleaded tab cathode
SOT429 (TO247) package.
2
3
1
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
PBYR30 40WT 45WT
V
RRM
Peak repetitive reverse - 40 45 V
voltage
V
V
I
O(AV)
RWM
R
Working peak reverse - 40 45 V
voltage
Continuous reverse voltage Tmb ≤ 107 ˚C - 40 45 V
Average rectified output square wave; δ = 0.5; Tmb ≤ 124 ˚C - 30 A
current (both diodes
conducting)
I
I
FRM
FSM
Repetitive peak forward square wave; δ = 0.5; Tmb ≤ 124 ˚C - 30 A
current per diode
Non-repetitive peak forward t = 10 ms - 300 A
current per diode t = 8.3 ms - 330 A
sinusoidal; Tj = 125 ˚C prior to
I
RRM
T
T
j
stg
Peak repetitive reverse pulse width and repetition rate - 2 A
surge; with reapplied V
surge current per diode limited by T
j max
Operating junction - 150 ˚C
temperature
Storage temperature - 65 175 ˚C
RRM(max)
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
R
th j-mb
th j-a
Thermal resistance junction per diode - - 1.6 K/W
to mounting base both diodes - - 1.2 K/W
Thermal resistance junction in free air - 45 - K/W
to ambient
July 1998 1 Rev 1.200
Philips Semiconductors Product specification
Rectifier diodes PBYR3045WT series
Schottky barrier
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
C
d
Forward voltage per diode IF = 20 A; Tj = 125˚C - 0.58 0.6 V
IF = 30 A; Tj = 125˚C - 0.69 0.72 V
IF = 30 A - 0.71 0.76 V
Reverse current per diode VR = V
Junction capacitance VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 450 - pF
VR = V
RWM
; Tj = 100˚C - 15 30 mA
RWM
- 0.12 1.5 mA
July 1998 2 Rev 1.200
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