Philips PBYR3035PTF, PBYR3040PTF, PBYR3045PTF Datasheet
Philips Semiconductors Product specification
Rectifier diodes PBYR3045PTF series
schottky barrier
GENERAL DESCRIPTION QUICK REFERENCE DATA
Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT
schottky barrier rectifier diodes in a
full pack, plastic envelope featuring PBYR30- 35PTF 40PTF 45PTF
low forward voltage drop and V
RRM
absence of stored charge. These voltage
devices can withstand reverse V
voltage transients and have I
F
O(AV)
guaranteedreversesurgecapability. diodes conducting)
The devices are intended for use in
switched mode power supplies and
high frequency circuits in general
where low conduction and zero
switching losses are important.
PINNING - SOT199 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 anode 1 (a)
2 cathode (k)
Repetitive peak reverse 35 40 45 V
Forward voltage 0.65 0.65 0.65 V
Output current (both 20 20 20 A
case
a1
1
a2
3
3 anode 2 (a)
k
2
12
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-35 -40 -45
V
RRM
V
RWM
V
R
I
O(AV)
I
O(RMS)
I
FRM
I
FSM
I2tI
I
RRM
I
RSM
T
stg
T
j
Repetitive peak reverse voltage - 35 40 45 V
Crest working reverse voltage - 35 40 45 V
Continuous reverse voltage Ths ≤ 113 ˚C - 35 40 45 V
Output current (both diodes square wave; δ = 0.5; - 20 A
conducting) Ths ≤ 109 ˚C
RMS forward current - 20 A
Repetitive peak forward current t = 25 µs; δ = 0.5; - 30 A
per diode Ths ≤ 109 ˚C
Non-repetitive peak forward t = 10 ms - 135 A
current per diode. t = 8.3 ms - 150 A
sinusoidal; Tj = 125 ˚C prior
to surge; with reapplied
V
2
t for fusing t = 10 ms - 91 A2s
RWM(max)
Repetitive peak reverse current tp = 2 µs; δ = 0.001 - 2 A
per diode.
Non-repetitive peak reverse tp = 100 µs-2A
current per diode.
Storage temperature -65 175 ˚C
Operating junction temperature - 150 ˚C
August 1996 1 Rev 1.100
Philips Semiconductors Product specification
Rectifier diodes PBYR3045PTF series
schottky barrier
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
R
th j-a
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink
Thermal resistance junction to per diode - - 4.0 K/W
heatsink both diodes - - 3.5 K/W
(with heatsink compound)
Thermal resistance junction to in free air. - 35 - K/W
ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
C
d
Forward voltage (per diode) IF = 30 A; Tj = 125˚C - 0.70 0.75 V
IF = 20 A; Tj = 125˚C - 0.58 0.65 V
IF = 30 A - 0.75 0.80 V
Reverse current (per diode) VR = V
Junction capacitance (per f = 1MHz; VR = 5V; Tj = 25 ˚C to - 800 - pF
VR = V
RWM
; Tj = 125 ˚C - 12 40 mA
RWM
- 100 200 µA
diode) 125 ˚C
August 1996 2 Rev 1.100
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