Philips PBYR3035WT, PBYR3040WT, PBYR3045WT Datasheet
Philips Semiconductors Product specification
Rectifier diodes PBYR3045WT series
Schottky barrier
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop V
R
= 40 V/ 45 V
• Fast switching
• Reverse surge capability I
O(AV)
= 30 A
• High thermal cycling performance
• Low thermal resistance I
FSM
= 300 A
VF ≤ 0.6 V
GENERAL DESCRIPTION PINNING SOT429 (TO247)
Dual, common cathode schottky PIN DESCRIPTION
rectifier diodes in a plastic
envelope. Intended for use as 1 anode 1 (a)
output rectifiersin low voltage, high
frequency switched mode power 2 cathode (k)
supplies.
3 anode 2 (a)
The PBYR3045WT series is
suppliedintheconventionalleaded tab cathode
SOT429 (TO247) package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
PBYR30 40WT 45WT
V
RRM
Peak repetitive reverse - 40 45 V
voltage
V
RWM
Working peak reverse - 40 45 V
voltage
V
R
Continuous reverse voltage Tmb ≤ 107 ˚C - 40 45 V
I
O(AV)
Average rectified output square wave; δ = 0.5; Tmb ≤ 124 ˚C - 30 A
current (both diodes
conducting)
I
FRM
Repetitive peak forward square wave; δ = 0.5; Tmb ≤ 124 ˚C - 30 A
current per diode
I
FSM
Non-repetitive peak forward t = 10 ms - 300 A
current per diode t = 8.3 ms - 330 A
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse pulse width and repetition rate - 2 A
surge current per diode limited by T
j max
T
j
Operating junction - 150 ˚C
temperature
T
stg
Storage temperature - 65 175 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction per diode - - 1.6 K/W
to mounting base both diodes - - 1.2 K/W
R
th j-a
Thermal resistance junction in free air - 45 - K/W
to ambient
k
a1
a2
13
2
2
3
1
July 1998 1 Rev 1.200
Philips Semiconductors Product specification
Rectifier diodes PBYR3045WT series
Schottky barrier
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
Forward voltage per diode IF = 20 A; Tj = 125˚C - 0.58 0.6 V
IF = 30 A; Tj = 125˚C - 0.69 0.72 V
IF = 30 A - 0.71 0.76 V
I
R
Reverse current per diode VR = V
RWM
- 0.12 1.5 mA
VR = V
RWM
; Tj = 100˚C - 15 30 mA
C
d
Junction capacitance VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 450 - pF
July 1998 2 Rev 1.200
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