Philips PBYR3035PTF, PBYR3040PTF, PBYR3045PTF Datasheet

Philips Semiconductors Product specification

Rectifier diodes

PBYR3045PTF series

schottky barrier

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Dual, low leakage, platinum barrier,

SYMBOL

PARAMETER

MAX.

MAX.

MAX.

UNIT

schottky barrier rectifier diodes in a

PBYR30-

35PTF

40PTF

45PTF

full pack, plastic envelope featuring

low forward voltage drop and

VRRM

Repetitive peak reverse

35

40

45

V

absence of stored charge. These

voltage

devices

can withstand

reverse

VF

Forward voltage

0.65

0.65

0.65

V

voltage

transients and

have

IO(AV)

Output current (both

20

20

20

A

guaranteed reverse surge capability.

diodes conducting)

The devices are intended for use in

switched mode power supplies and

high frequency circuits in general

where low conduction and zero

switching losses are important.

PINNING - SOT199

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

case

1

anode 1 (a)

a1

a2

2

cathode (k)

1

3

3

anode 2 (a)

1

2

3

k

2

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-35

-40

-45

VRRM

Repetitive peak reverse voltage

-

35

40

45

V

VRWM

Crest working reverse voltage

Ths ≤ 113 ˚C

-

35

40

45

V

VR

Continuous reverse voltage

-

35

40

45

V

IO(AV)

Output current (both diodes

square wave; δ = 0.5;

-

20

A

conducting)

Ths ≤

109 ˚C

IO(RMS)

RMS forward current

t = 25 μs; δ = 0.5;

-

20

A

IFRM

Repetitive peak forward current

-

30

A

per diode

Ths ≤

109 ˚C

IFSM

Non-repetitive peak forward

t = 10 ms

-

135

A

current per diode.

t = 8.3 ms

-

150

A

sinusoidal; Tj = 125 ˚C prior

to surge; with reapplied

I2t

I2t for fusing

VRWM(max)

-

91

A2s

t = 10 ms

IRRM

Repetitive peak reverse current

tp = 2

μs;

δ = 0.001

-

2

A

per diode.

tp = 100 μs

IRSM

Non-repetitive peak reverse

-

2

A

current per diode.

Tstg

Storage temperature

-65

175

˚C

Tj

Operating junction temperature

-

150

˚C

August 1996

1

Rev 1.100

Philips Semiconductors Product specification

Rectifier diodes					PBYR3045PTF series
schottky barrier
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL	PARAMETER		CONDITIONS		MIN.		TYP.	MAX.	UNIT
Visol	Repetitive peak voltage from all		R.H. ≤ 65 % ; clean and dustfree		-			2500	V
	three terminals to external
	heatsink
Cisol	Capacitance from T2 to external		f = 1 MHz		-		22	-	pF
	heatsink
THERMAL RESISTANCES
SYMBOL	PARAMETER	CONDITIONS			MIN.		TYP.	MAX.	UNIT
Rth j-hs	Thermal resistance junction to	per diode			-		-	4.0	K/W
	heatsink	both diodes			-		-	3.5	K/W
		(with heatsink compound)
Rth j-a	Thermal resistance junction to	in free air.			-		35	-	K/W
	ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL	PARAMETER	CONDITIONS			MIN.		TYP.	MAX.	UNIT
VF	Forward voltage (per diode)	IF = 30 A; Tj = 125˚C			-		0.70	0.75	V
		IF = 20 A; Tj = 125˚C			-		0.58	0.65	V
		IF = 30 A			-		0.75	0.80	V
IR	Reverse current (per diode)	VR = VRWM			-		100	200	μA
Cd		VR = VRWM; Tj = 125 ˚C			-		12	40	mA
	Junction capacitance (per	f = 1MHz; VR = 5V; Tj = 25 ˚C to			-		800	-	pF
	diode)	125 ˚C

August 1996

2

Rev 1.100