Philips PBYR30100WT Datasheet

Philips Semiconductors Product specification

	Rectifier diodes			PBYR30100WT series
	Schottky barrier
	FEATURES	SYMBOL		QUICK REFERENCE DATA
	• Low forward volt drop			VR = 60 V/ 80 V/ 100 V
	• Fast switching	a1	a2
	• Reverse surge capability
		1	3	IO(AV) = 30 A
	• High thermal cycling performance
	• Low thermal resistance			VF ≤ 0.7 V
			k 2
	GENERAL DESCRIPTION	PINNING		SOT429 (TO247)
	Schottky rectifier diodes in a plastic	PIN	DESCRIPTION
	envelope. Intended for use as
	output rectifiers in low voltage, high	1	anode 1
	frequency switched mode power
	supplies.	2	cathode
	The PBYR30100WT series is	3	anode 2
	supplied in the conventional leaded
	SOT429 (TO247) package.	mounting	cathode	1	2	3
		base

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL	PARAMETER	CONDITIONS	MIN.		MAX.		UNIT
		PBYR30		60WT	80WT	100WT
VRRM	Peak repetitive reverse		-	60	80	100	V
	voltage
VRWM	Working peak reverse		-	60	80	100	V
	voltage	Tmb ≤ 139 ˚C
VR	Continuous reverse voltage		-	60	80	100	V
IO(AV)	Average rectified output	square wave; δ = 0.5;	-		30		A
	current (both diodes	Tmb ≤ 124 ˚C
	conducting)	square wave; δ = 0.5;
IFRM	Repetitive peak forward		-		30		A
IFSM	current per diode	Tmb ≤ 124 ˚C
	Non-repetitive peak forward	t = 10 ms	-		180		A
	current per diode	t = 8.3 ms	-		200		A
		sinusoidal; Tj = 125 ˚C prior to
		surge; with reapplied VRRM(max)
IRRM	Peak repetitive reverse	pulse width and repetition rate	-		1		A
Tj	surge current per diode	limited by Tj max
	Operating junction		-		150		˚C
	temperature
Tstg	Storage temperature		- 65		175		˚C

THERMAL RESISTANCES

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
Rth j-mb	Thermal resistance junction	per diode	-	-	1.4	K/W
	to mounting base	both diodes	-	-	1	K/W
Rth j-a	Thermal resistance junction	in free air	-	45	-	K/W
	to ambient

November 1998

1

Rev 1.300

Philips Semiconductors Product specification

Rectifier diodes			PBYR30100WT series
Schottky barrier
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 ˚C unless otherwise specified
SYMBOL	PARAMETER	CONDITIONS		MIN.	TYP.	MAX.	UNIT
VF	Forward voltage	IF = 15 A; Tj = 125˚C		-	0.61	0.7	V
		IF = 30 A; Tj = 125˚C		-	0.74	0.85	V
		IF = 15 A		-	0.77	0.85	V
IR	Reverse current	VR = VRWM		-	5	150	μA
Cd		VR = VRWM; Tj = 125˚C		-	5	15	mA
	Junction capacitance	VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C		-	600	-	pF

November 1998

2

Rev 1.300