Philips ne5210 DATASHEETS

Philips Semiconductors Product specification

NE5210Transimpedance amplifier (280MHz)

1

1995 Apr 26 853-1654 15170

DESCRIPTION

The NE5210 is a 7kΩ transimpedance wide band, low noise amplifier with differential outputs, particularly suitable for signal recovery in fiber-optic receivers. The part is ideally suited for many other RF applications as a general purpose gain block.

FEATURES

•Low noise: 3.5pA/√Hz

•Single 5V supply

•Large bandwidth: 280MHz

•Differential outputs

•Low input/output impedances

•High power supply rejection ratio

•High overload threshold current

•Wide dynamic range

•7kΩ differential transresistance

APPLICATIONS

•Fiber-optic receivers, analog and digital

•Current-to-voltage converters

PIN CONFIGURATION

1

2

3

4

5

6

7 8

14

13

12

11

10

9

GND

2

GND

2

NC

I

IN

NC

V

CC1

V

CC2

GND

1

GND

1

GND

1

GND

1

GND

2

OUT (–)

OUT (+)

D Package

TOP VIEW

SD00318

•Wideband gain block

•Medical and scientific instrumentation

•Sensor preamplifiers

•Single-ended to differential conversion

•Low noise RF amplifiers

•RF signal processing

ORDERING INFORMATION

DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #

14-Pin Plastic Small Outline (SO) Package 0 to +70°C NE5210D SOT108-1

ABSOLUTE MAXIMUM RATINGS

SYMBOL PARAMETER RATING UNIT

V

CC

Power supply 6 V

T

A

Operating ambient temperature range 0 to +70 °C

T

J

Operating junction temperature range -55 to +150 °C

T

STG

Storage temperature range -65 to +150 °C

P

DMAX

Power dissipation, TA=25°C (still air)

1

1.0 W

I

INMAX

Maximum input current

2

5 mA

NOTES:

1. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance: θ

JA

=125°C/W.

2. The use of a pull-up resistor to VCC for the PIN diode, is recommended.

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER RATING UNIT

V

CC

Supply voltage 4.5 to 5.5 V

T

A

Ambient temperature range 0 to +70 °C

T

J

Junction temperature range 0 to +90 °C

Philips Semiconductors Product specification

NE5210Transimpedance amplifier (280MHz)

1995 Apr 26

2

DC ELECTRICAL CHARACTERISTICS

Min and Max limits apply over operating temperature range at VCC=5V, unless otherwise specified. Typical data applies at VCC=5V and T

A

=25°C.

LIMITS

SYMBOL

PARAMETER

TEST CONDITIONS

Min Typ Max

UNIT

V

IN

Input bias voltage 0.6 0.8 0.95 V

V

O

±

Output bias voltage 2.8 3.3 3.7 V

V

OS

Output offset voltage 0 80 mV

I

CC

Supply current 21 26 32 mA

I

OMAX

Output sink/source current

1

3 4 mA

I

IN

Input current (2% linearity) Test Circuit 8, Procedure 2 ±120 ±160 µA

I

INMAX

Maximum input current overload threshold

Test Circuit 8, Procedure 4 ±160 ±240 µA

NOTES:

1. Test condition: output quiescent voltage variation is less than 100mV for 3mA load current.

AC ELECTRICAL CHARACTERISTICS

Typical data and Min/Max limits apply at VCC=5V and TA=25°C.

LIMITS

SYMBOL

PARAMETER

TEST CONDITIONS

Min Typ Max

UNIT

R

T

Transresistance

(differential output)

DC tested, RL=∞

Test Circuit 8, Procedure 1

4.9 7 10 kΩ

R

O

Output resistance

(differential output)

DC tested 16 30 42 Ω

R

T

Transresistance

(single-ended output)

DC tested, RL=∞ 2.45 3.5 5 kΩ

R

O

Output resistance

(single-ended output)

DC tested 8 15 21 Ω

f

3dB

Bandwidth (-3dB) Test Circuit 1, TA=25°C 200 280 MHz

R

IN

Input resistance 60 Ω

C

IN

Input capacitance 7.5 pF

∆R/∆V

Transresistance power supply sensitivity

VCC=5±0.5V 9.6 20 %/V

∆R/∆T

Transresistance ambient temperature sensitivity

∆TA=T

A MAX-TA MIN

0.05 0.1 %/°C

I

N

RMS noise current spectral density (referred to input)

f=10MHz, TA=25°C

Test Circuit 2

3.5 6 pA/√Hz

TA=25°C

Test Circuit 2

Integrated RMS noise current over the bandwidth (referred to input)

∆f=100MHz 37

the bandwidth (referred to input) C

S

=0

1

∆f=200MHz 56

I

T

∆f=300MHz 71

nA

∆f=100MHz 40 ∆f=200MHz 66

S

=1pF

∆f=300MHz 89

PSRR

Power supply rejection ratio

2

(V

CC1=VCC2

)

DC tested, ∆VCC=0.1V

Equivalent AC test circuit 3

20 36 dB

PSRR

Power supply rejection ratio

2

(V

CC1

)

DC tested, ∆VCC=0.1V

Equivalent AC test circuit 4

20 36 dB

PSRR

Power supply rejection ratio

2

(V

CC2

)

DC tested, ∆VCC=0.1V

Equivalent AC test circuit 5

65 dB

PSRR

Power supply rejection ratio2 (ECL configuration)

f=0.1MHz, Test Circuit 6 23 dB

CS=1pF

Philips Semiconductors Product specification

NE5210Transimpedance amplifier (280MHz)

1995 Apr 26

3

AC ELECTRICAL CHARACTERISTICS (Continued)

LIMITS

SYMBOL

PARAMETER

TEST CONDITIONS

Min Typ Max

UNIT

V

OMAX

Maximum output voltage swing differential

RL=∞

Test Circuit 8, Procedure 3

2.4 3.2 V

P-P

V

INMAX

Maximum input amplitude for output duty cycle of 50±5%

3

Test Circuit 7 650 mV

P-P

t

R

Rise time for 50 mV

P-P

output signal

4

Test Circuit 7 0.8 1.2 ns

NOTES:

1. Package parasitic capacitance amounts to about 0.2pF

2. PSRR is output referenced and is circuit board layout dependent at higher frequencies. For best performance use RF filter in V

CC

line.

3. Guaranteed by linearity and overload tests.

4. t

R

defined as 20-80% rise time. It is guaranteed by a -3dB bandwidth test.

TEST CIRCUITS

Test Circuit 2

Test Circuit 1

R

T



V

OUT

V

IN

R  2  S21  R R

T



V

OUT

V

IN

R  4  S21  R

SINGLE-ENDED DIFFERENTIAL

RO Z

O



1  S22 1  S22



 33 RO 2Z

O



1  S22 1  S22



 66

NETWORK ANALYZER

S-PARAMETER TEST SET

PORT 1

PORT 2

5V

33

IN DUT

OUT

50

33

GND

1

GND

2

V

CC1VCC2

ZO = 50

0.1µF

R

L

= 50

R = 1k

0.1µF

SPECTRUM ANALYZER

5V

33

IN DUT

OUT

33

GND

1

GND

2

V

CC1VCC2

0.1µF

RL = 50

0.1µF

AV = 60DB

NC

Z

O

= 50

Z

O

= 50

SD00319

Philips Semiconductors Product specification

NE5210Transimpedance amplifier (280MHz)

1995 Apr 26

4

TEST CIRCUITS (Continued)

Test Circuit 4

Test Circuit 3

NETWORK ANALYZER

S-PARAMETER TEST SET

PORT 1 PORT 2

V

CC2

V

CC1

GND

1

GND

2

IN

CURRENT PROBE

1mV/mA

CAL

TEST

TRANSFORMER

NH0300HB

100

33

16

5V

OUT

BAL.

0.1µF

10µF

0.1µF

50 UNBAL.

NETWORK ANALYZER

S-PARAMETER TEST SET

PORT 1 PORT 2

CURRENT PROBE

1mV/mA

CAL

TEST

TRANSFORMER

NH0300HB

100

33

16

5V

OUT

BAL.

50 UNBAL.

V

CC1

V

CC2

IN

0.1µF

10µF

0.1µF

10µF

5V

10µF

GND

1

GND

2

SD00320

Philips Semiconductors Product specification

NE5210Transimpedance amplifier (280MHz)

1995 Apr 26

5

TEST CIRCUITS (Continued)

NETWORK ANALYZER

S-PARAMETER TEST SET

PORT 1 PORT 2

CURRENT PROBE

1mV/mA

CAL

TEST

TRANSFORMER

NH0300HB

100

33

16

5V

OUT

BAL.

50 UNBAL.

V

CC2

V

CC1

IN

0.1µF

10µF

0.1µF

10µF

5V

Test Circuit 6

Test Circuit 5

NETWORK ANALYZER

S-PARAMETER TEST SET

PORT 1 PORT 2

CURRENT PROBE

1mV/mA

CAL

TEST

TRANSFORMER

NH0300HB

100

33

16

OUT

BAL.

50 UNBAL.

GND

2

GND

1

V

CC1

V

CC2

IN

0.1µF

10µF

GND

0.1µF

10µF

5.2V

10µF

GND

2

GND

1

SD00321