Philips NE5209 Service Manual

INTEGRATED CIRCUITS
NE/SA5209
Wideband variable gain amplifier
Product specification 1990 Aug 20
RF Communications Handbook
Philips Semiconductors
Philips Semiconductors Product specification
NE/SA5209Wideband variable gain amplifier
DESCRIPTION
The NE5209 represents a breakthrough in monolithic amplifier design featuring several innovations. This unique design has combined the advantages of a high speed bipolar process with the proven Gilbert architecture.
The NE5209 is a linear broadband RF amplifier whose gain is controlled by a single DC voltage. The amplifier runs off a single 5 volt supply and consumes only 40mA. The amplifier has high impedance (1k) differential inputs. The output is 50 differential. Therefore, the 5209 can simultaneously perform AGC, impedance transformation, and the balun functions.
The dynamic range is excellent over a wide range of gain setting. Furthermore, the noise performance degrades at a comparatively slow rate as the gain is reduced. This is an important feature when building linear AGC systems.
FEA TURES
Gain to 1.5GHz
850MHz bandwidth
High impedance differential input
50 differential output
Single 5V power supply
0 - 1V gain control pin
>60dB gain control range at 200MHz
26dB maximum gain differential
Exceptional V
CONTROL
/ V
GAIN
linearity
7dB noise figure minimum
Full ESD protection
Easily cascadable
PIN CONFIGURA TION
N, D PACKAGES
1
V
CC1
2
GND
1
3
IN
A
4
GND
1
5
IN
B
6
GND
1
7
V
BG
8
V
AGC
Figure 1. Pin Configuration
APPLICATIONS
Linear AGC systems
Very linear AM modulator
RF balun
Cable TV multi-purpose amplifier
Fiber optic AGC
RADAR
User programmable fixed gain block
Video
Satellite receivers
Cellular communications
16
V
CC2
15
GND
2
14
OUT
A
13
GND
2
12
OUT
B
11
GND
2
10
GND
2
9
GND
2
SR00237
ORDERING INFORMATION
DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #
16-Pin Plastic Small Outline (SO) package 16-Pin Plastic Dual In-Line Package (DIP) 0 to +70°C NE5209N SOT28-4 16-Pin Plastic Small Outline (SO) package -40 to +85°C SA5209D SOT109-1 16-Pin Plastic Dual In-Line Package (DIP) -40 to +85°C SA5209N SOT28-4
1990 Aug 20 853-1453 00223
0 to +70°C
NE5209D SOT109-1
Philips Semiconductors Product specification
SYMBOL
PARAMETER
TEST CONDITIONS
UNIT
ICCS
t
A
AVVolt
t)
dB
AVVolt
/diff
t)
dB
RINInput resistance (single-ended)
k
R
Output resistance (single-ended)
VOSOutput offset voltage (output referred)
mV
VINDC level on inputs
V
V
DC level on outputs
V
PSRR
dB
BG
gp g
NE/SA5209Wideband variable gain amplifier
ABSOLUTE MAXIMUM RATINGS
SYMBOL PARAMETER RATING UNITS
V
CC
P
D
T
JMAX
T
STG
NOTES:
1. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance, θ 16-Pin DIP: θ 16-Pin SO: θ
RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER RATING UNITS
V
CC
T
A
T
J
Supply voltage -0.5 to +8.0 V Power dissipation, TA = 25oC (still air)
16-Pin Plastic DIP 16-Pin Plastic SO
1
1450 1100
mW
mW Maximum operating junction temperature 150 Storage temperature range -65 to +150
:
= 85°C/W
JA
= 110°C/W
JA
Supply voltage V
CC1
JA
= V
= 4.5 to 7.0V V
CC2
Operating ambient temperature range
NE Grade SA Grade
0 to +70
-40 to +85
Operating junction temperature range
NE Grade SA Grade
0 to +90
-40 to +105
°C °C
°C °C
°C °C
DC ELECTRICAL CHARACTERISTICS
TA = 25oC, V
OUT
OUT
V
BG
CC1
= V
CC2
= +5V, V
= 1.0V , unless otherwise specified.
AGC
upply curren
age gain (single-ended in/single-ended ou
age gain (single-ended in
-
-
Output offset supply rejection ratio (output referred)
Bandgap reference voltage
erential ou
LIMITS
MIN TYP MAX
DC tested 38 43 48
Over temperature
1
30 55
DC tested, RL = 10k 17 19 21
Over temperature
1
16 22
DC tested, RL = 10k 23 25 27
Over temperature
1
22 28
DC tested at ±50µA 0.9 1.2 1.5
Over temperature
1
0.8 1.7 DC tested at ±1mA 40 60 75 Over temperature
1
35 90
+20 ±100
Over temperature
1
±250
1.6 2.0 2.4 Over temperature
1
1.4 2.6
1.9 2.4 2.9 Over temperature
1
1.7 3.1
20 45
Over temperature
4.5V<VCC<7V = 10k
R
BG
Over temperature
1
15
1.2 1.32 1.45
1
1.1 1.55
m
V
1990 Aug 20
Philips Semiconductors Product specification
SYMBOL
PARAMETER
TEST CONDITIONS
UNIT
I
AGC pin DC bias current
A
SYMBOL
PARAMETER
TEST CONDITIONS
UNIT
BW-3dB bandwidth
MHz
GF
Gain flatness
dB
V
NE/SA5209Wideband variable gain amplifier
DC ELECTRICAL CHARACTERISTICS
TA = 25oC, V
R
BG
V
AGC
BAGC
NOTES:
1. “Over Temperature Range” testing is as follows:
At the time of this data sheet release, the D package over-temperature data sheet limits are guaranteed via guardbanded room temperature testing only.
AC ELECTRICAL CHARACTERISTICS
TA = 25oC, V
V
IMAX
OMAX
NF Noise figure (unmatched configuration) RS = 50, f = 50MHz 9.3 dB
V
IN-EQ
S12 Reverse isolation f = 100MHz -60 dB
G/V
G/T Gain temperature sensitivity RL = 50Ω 0.013
C
IN
BW
AGC
P
O-1dB
P
I-1dB
IP3
OUT
IP3
IN
G
AB
NOTE:
1. “Over Temperature Range” testing is as follows:
At the time of this data sheet release, the D package over-temperature data sheet limits are guaranteed via guardbanded room temperature testing only.
2. With R occurs at input for single-ended gain < 6dB and at output for single-ended gain > 6dB.
= V
CC1
= +5.0V, V
CC2
= 1.0V , unless otherwise specified.
AGC
LIMITS
MIN TYP MAX
Bandgap loading Over temperature AGC DC control voltage range Over temperature
0V<V
AGC
Over temperature
1 1
2 10
0-1.3 V
<1.3V -0.7 -6
1
-10
NE is 0 to +70°C SA is -40 to +85°C
= V
CC1
= +5.0V, V
CC2
= 1.0V , unless otherwise specified.
AGC
LIMITS
MIN TYP MAX
­Over temperature
1
600 850 500
DC - 500MHz +0.4
Over temperature
Maximum input voltage swing (single-ended) for linear operation
Maximum output voltage swing (single-ended) for linear operation
2
RL = 50 400 mV
2
RL = 1k 1.9 V
Equivalent input noise voltage spectral density f = 100MHz 2.5
Gain supply sensitivity (single-ended) 0.3 dB/V
CC
1
+0.6
200 mV
nV/Hz
dB/°C
Input capacitance (single-ended) 2 pF
-3dB bandwidth of gain control function 20 MHz
1dB gain compression point at output f = 100MHz -3 dBm 1dB gain compression point at input
Third-order intercept point at output
Third-order intercept point at input
f = 100MHz, V
f = 100MHz, V
f = 100MHz, V
Gain match output A to output B f = 100MHz, V
=0.1V
>0.5V
<0.5V
AGC
AGC
AGC
= 1V 0.1 dB
AGC
-10 dBm
+13 dBm
+5 dBm
NE is 0 to +70°C SA is -40 to +85°C
> 1k, overload occurs at input for single-ended gain < 13dB and at output for single-ended gain > 13dB. With RL = 50, overload
L
k
µ
P-P
P-P
P-P
1990 Aug 20
Philips Semiconductors Product specification
NE/SA5209Wideband variable gain amplifier
NE5209 APPLICATIONS
The NE5209 is a wideband variable gain amplifier (VGA) circuit which finds many applications in the RF, IF and video signal processing areas. This application note describes the operation of the circuit and several applications of the VGA. The simplified equivalent schematic of the VGA is shown in Figure 2. Transistors Q1-Q6 form the wideband Gilbert multiplier input stage which is biased by current source I1. The top differential pairs are biased from a buffered and level-shifted signal derived from the V and the RF input appears at the lower differential pair. The circuit topology and layout offer low input noise and wide bandwidth. The second stage is a differential transimpedance stage with current feedback which maintains the wide bandwidth of the input stage. The output stage is a pair of emitter followers with 50 output impedance. There is also an on-chip bandgap reference with buffered output at 1.3V, which can be used to derive the gain control voltage.
Both the inputs and outputs should be capacitor coupled or DC isolated from the signal sources and loads. Furthermore, the two inputs should be DC isolated from each other and the two outputs should likewise be DC isolated from each other. The NE5209 was designed to provide optimum performance from a 5V power source. However, there is some range around this value (4.5 - 7V) that can be used.
The input impedance is about 1k. The main advantage to a differential input configuration is to provide the balun function. Otherwise, there is an advantage to common mode rejection, a specification that is not normally important to RF designs. The source impedance can be chosen for two different performance characteristics: Gain, or noise performance. Gain optimization will be realized if the input impedance is matched to about 1k. A 4:1 balun will provide such a broadband match from a 50 source. Noise performance will be optimized if the input impedance is matched to about 200. A 2:1 balun will provide such a broadband match from a 50 source. The minimum noise figure can then be expected to be about 7dB. Maximum gain will be about 23dB for a single-ended output. If the differential output is used and properly matched, nearly 30dB can be realized. With gain optimization, the noise figure will degrade to about 8dB. With no matching unit at the input, a 9dB noise figure can be expected from a 50 source. If the source is terminated, the noise figure will increase to about 15dB. All these noise figures will occur at maximum gain.
The NE5209 has an excellent noise figure vs gain relationship. With any VGA circuit, the noise performance will degrade with decreasing
AGC
input
gain. The 5209 has about a 1.2dB noise figure degradation for each 2dB gain reduction. With the input matched for optimum gain, the 8dB noise figure at 23dB gain will degrade to about a 20dB noise figure at 0dB gain.
The NE5209 also displays excellent linearity between voltage gain and control voltage. Indeed, the relationship is of sufficient linearity that high fidelity AM modulation is possible using the NE5209. A maximum control voltage frequency of about 20MHz permits video baseband sources for AM.
A stabilized bandgap reference voltage is made available on the NE5209 (Pin 7). For fixed gain applications this voltage can be resistor divided, and then fed to the gain control terminal (Pin 8). Using the bandgap voltage reference for gain control produces very stable gain characteristics over wide temperature ranges. The gain setting resistors are not part of the RF signal path, and thus stray capacitance here is not important.
The wide bandwidth and excellent gain control linearity make the NE5209 VGA ideally suited for the automatic gain control (AGC) function in RF and IF processing in cellular radio base stations, Direct Broadcast Satellite (DBS) decoders, cable TV systems, fiber optic receivers for wideband data and video, and other radio communication applications. A typical AGC configuration using the NE5209 is shown in Figure 3. Three NE5209s are cascaded with appropriate AC coupling capacitors. The output of the final stage drives the full-wave rectifier composed of two UHF Schottky diodes BAT17 as shown. The diodes are biased by R1 and R2 to V
CC
such that a quiescent current of about 2mA in each leg is achieved. An NE5230 low voltage op amp is used as an integrator which drives the V
pin on all three NE5209s. R3 and C3 filter the high
AGC
frequency ripple from the full-wave rectified signal. A voltage divider is used to generate the reference for the non-inverting input of the op amp at about 1.7V. Keeping D3 the same type as D1 and D2 will provide a first order compensation for the change in Schottky voltage over the operating temperature range and improve the AGC performance. R6 is a variable resistor for adjustments to the op amp reference voltage. In low cost and large volume applications this could be replaced with a fixed resistor, which would result in a slight loss of the AGC dynamic range. Cascading three NE5209s will give a dynamic range in excess of 60dB.
The NE5209 is a very user-friendly part and will not oscillate in most applications. However, in an application such as with gains in excess of 60dB and bandwidth beyond 100MHz, good PC board layout with proper supply decoupling is strongly recommended.
V
0–1V
1990 Aug 20
AGC
V
CC
R
1
Q
Q
1
2
+
IN
Q
5
B
IN
A
I
1
Q
3
R
2
Q
4
Q
6
R
3
A1
R
4
BANDGAP
REFERENCE
Q
7
Q
8
I
2
OUT
B
50
I
3
V
BG
OUT
A
50
SR00238
Figure 2. Equivalent Schematic of the VGA
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