Philips N74F37N, N74F37D Datasheet
INTEGRATED CIRCUITS
74F37
Quad 2-input NAND buffer
Product specification
IC15 Data Handbook
1990 May 24
Philips Semiconductors Product specification
74F37Quad 2-input NAND buffer
TYPE
PROPAGATION
SUPPLY CURRENT
DELA Y
74F37 3.5ns 13mA
ORDERING INFORMATION
COMMERCIAL RANGE
TYPICAL
DESCRIPTION
VCC = 5V ±10%,
= 0°C to +70°C
T
amb
TYPICAL
(TOTAL)
PKG DWG #
PIN CONFIGURATION
D0a
D0b
D1a
D1b
GND
14-pin plastic DIP N74F37N SOT27-1
14-pin plastic SO N74F37D SOT108-1
INPUT AND OUTPUT LOADING AND FAN OUT TABLE
PINS DESCRIPTION 74F (U.L.) HIGH/LOW LOAD VALUE HIGH/LOW
Dna, Dnb Data inputs 1.0/2.0 20µA/1.2mA
Qn Data outputs 750/106.6 15mA/64mA
NOTE: One (1.0) FAST unit load is defined as: 20µA in the High state and 0.6mA in the Low state.
LOGIC DIAGRAM
VCC = Pin 14
GND = Pin 7
D0a
D0b
D1a
D1b
D2a
D2b
D3a
D3b
1
2
4
5
9
10
12
13
3
6
8
11
SF00002
Q
0
Q
1
Q2
Q
3
FUNCTION TABLE
INPUTS OUTPUT
Dna Dnb Qn
L L H
L H H
H L H
H H L
NOTES:
1. H = High voltage level
2. L = Low voltage level
1
2
Q
3
0
4
5
1
6
Q
14
V
13
D3b
12
D3a
Q
11
D2b
10
D2a
9
Q2
87
SF00001
CC
3
LOGIC SYMBOL
12459101213
D0a D0bD1a D2a D2b D3a D3bD1b
Q0 Q1 Q2 Q3
36811
VCC = Pin 14
GND = Pin 7
May 24, 1990 853–0051 99679
SF00003
IEC/IEEE SYMBOL
2
1
2
4
5
9
10
12
13
&
3
6
8
11
SF00084
Philips Semiconductors Product specification
SYMBOL
PARAMETER
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS
1
UNIT
I
1mA
V
VOHHigh-level output voltage
V
MAX
IH
I
15mA
V
VOLLow-level output voltage
V
MAX
I
MAX
V
ICCSupply current (total)
V
MAX
mA
74F37Quad 2-input NAND buffer
ABSOLUTE MAXIMUM RATINGS
(Operation beyond the limits set forth in this table may impair the useful life of the device.
Unless otherwise noted these limits are over the operating free-air temperature range.)
SYMBOL
V
V
I
IN
V
I
OUT
T
T
CC
IN
OUT
amb
stg
Supply voltage –0.5 to +7.0 V
Input voltage –0.5 to +7.0 V
Input current –30 to +5 mA
Voltage applied to output in High output state –0.5 to V
Current applied to output in Low output state 128 mA
Operating free-air temperature range 0 to +70 °C
Storage temperature range –65 to +150 °C
RECOMMENDED OPERATING CONDITIONS
V
V
V
I
I
I
T
CC
IH
IL
IK
OH
OL
amb
Supply voltage 4.5 5.0 5.5 V
High-level input voltage 2.0 V
Low-level input voltage 0.8 V
Input clamp current –18 mA
High-level output current –15 mA
Low-level output current 64 mA
Operating free-air temperature range 0 +70 °C
PARAMETER RATING UNIT
CC
V
LIMITS
MIN NOM MAX
DC ELECTRICAL CHARACTERISTICS
(Over recommended operating free-air temperature range unless otherwise noted.)
LIMITS
MIN TYP
= –
p
V
=
IL
= MIN
IH
VCC = MIN,
OH
,
= –
OH
VCC = MIN,
p
V
IK
I
I
I
IH
I
IL
I
OS
Input clamp voltage VCC = MIN, II = I
Input current at maximum input voltage VCC = MAX, VI = 7.0V 100 µA
High-level input current VCC = MAX, VI = 2.7V 20 µA
Low-level input current VCC = MAX, VI = 0.5V –1.2 mA
Short-circuit output current
pp
3
I
CCH
I
CCL
=
IL
V
IH
,
= MIN
VCC = MAX –100 –225 mA
=
CC
=
OL
IK
±10%V
±5%V
CC
±10%V
±5%V
CC
±10%V
±5%V
CC
VIN = GND 3.0 6.0
VIN = 4.5V 23 33
CC
CC
CC
2.5
2.7 3.4
2.0
2.0
NOTES:
1. For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions for the applicable type.
2. All typical values are at V
3. Not more than one output should be shorted at a time. For testing I
= 5V, T
CC
techniques are preferable in order to minimize internal heating and more accurately reflect operational values. Otherwise, prolonged shorting
amb
= 25°C.
, the use of high-speed test apparatus and/or sample-and-hold
OS
of a High output may raise the chip temperature well above normal and thereby cause invalid readings in other parameter tests. In any
sequence of parameter tests, I
tests should be performed last.
OS
2
MAX
0.55
0.42 0.55
–0.73 –1.2 V
May 24, 1990
3
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