Philips mx1011b700y DATASHEETS

DISCRETE SEMICONDUCTORS

DATA SH EET

MX1011B700Y

NPN microwave power transistor

Product specification
Supersedes data of November 1994

1997 Feb 18

Philips Semiconductors Product specification

NPN microwave power transistor MX1011B700Y

FEATURES

• Suitable for short and medium
pulse applications up to
100 µs/10%

• Internal input and output
prematching networks allow an
easier design of circuits

• Diffused emitter ballasting resistors
improve ruggedness

• Interdigitated emitter-base
structure provides high emitter
efficiency

• Gold metallization with barrier
realizes very good stability of the
characteristics and excellent
lifetime

• Multicell geometry improves power
sharing and reduces thermal
resistance.

APPLICATIONS

Intended for use in common base,
class C, broadband, pulsed power
amplifiers for IFF, TCAS and Mode S
applications in the 1030 to 1090 MHz
band. Also suitable for medium pulse,
heavy duty operation within the
1030 to 1150 MHz band.

QUICK REFERENCE DATA

Microwave performance up to Tmb=25°C in a common base class C
broadband amplifier.

MODE OF

OPERATION

Class C t

CONDITIONS

=10µs;

p

f

(GHz)

V

(V)

CC

P

(W)

L

G

P

(dB)

1.09 50 650 ≥6 ≥48

δ =1%

PINNING - SOT439A

PIN DESCRIPTION

1 collector
2 emitter
3 base connected to flange

andbook, 4 columns

Top view

1

c

b

33

2

MAM045

e

η

(%)

C

DESCRIPTION

NPN silicon planar epitaxial
microwave power transistor in a
SOT439A metal ceramic flange
package with base connected to

Fig.1 Simplified outline and symbol.

flange.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1997 Feb 18 2

Philips Semiconductors Product specification

NPN microwave power transistor MX1011B700Y

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

CES

V

EBO

I

CM

P

tot

T

stg

T

j

T

sld

Note

1. Up to 0.2 mm from ceramic.

collector-base voltage open emitter − 65 V
collector-emitter voltage open base − 15 V
collector-emitter voltage RBE=0Ω−65 V
emitter-base voltage open collector − 3V
peak collector current tp≤ 10 µs; δ≤1% − 40 A
total power dissipation Tmb< 75 °C;

− 1365 W

tp≤ 10 µs; δ≤1%
storage temperature −65 +200 °C
junction temperature − 200 °C
soldering temperature t ≤ 10 s; note 1 − 235 °C

1600

handbook, halfpage

P

tot

(W)

1200

800

400

0

tp=10µs; δ = 1%; P

050

= 1365 W.

tot max

100 150

MRA445

Tmb (

o

Fig.2 Maximum power dissipation derating as a

function of mounting base temperature.

200−50

C)

1997 Feb 18 3

Philips Semiconductors Product specification

NPN microwave power transistor MX1011B700Y

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MAX. UNIT

R

th j-mb

R

th mb-h

Z

th j-h

Notes

1. See “

2. Equivalent thermal impedance under nominal pulse microwave operating conditions.

CHARACTERISTICS

=25°C unless otherwise specified.

T

mb

SYMBOL PARAMETER CONDITIONS MAX. UNIT

I

CBO

I

CES

I

EBO

V

(BR)CBO

V

(BR)CES

thermal resistance from junction to mounting base Tj= 120 °C 1.12 K/W
thermal resistance from mounting base to heatsink note 1 0.2 K/W
thermal impedance from junction to heatsink tp=10µs; δ = 1%;

0.06 K/W

notes 1 and 2

Mounting recommendations in the General part of handbook SC19a”

.

collector cut-off current VCB= 50 V; IE= 0 20 mA
collector cut-off current VCE= 50 V; VBE= 0 20 mA
emitter cut-off current VEB= 1.5 V; IC=0 5 mA
collector-base breakdown voltage IC= 140 mA; VBE= 0 65 V
collector-emitter breakdown voltage IC= 140 mA; VBE= 0 65 V

APPLICATION INFORMATION

Microwave performance up to T

=25°C in a broadband test circuit as shown in Fig.3.

mb

MODE OF OPERATION CONDITIONS

t

=10µs; δ = 1% 1.09 50 650;

p

t

= 0.5 µs; δ = 50%;

p

Class C

tp=112µs; δ =1%

= 6.6 µs; δ = 51%;

t

p

tp= 3.3 ms; δ = 43%

=32µs; δ = 1% 1.09 50 typ. 700 typ. 6.7 typ. 55

t

p

f

(GHz)

V

(V)

CC

P

L

(W)

typ. 740

G

(dB)

≥6.0;
typ. 7

P

η

C

(%)

≥48;
typ. 55

1.03 to 1.09 50 typ. 650 typ. 6.4 typ. 45

1.03 to 1.15 50 typ. 300 typ. 7 typ. 45

1997 Feb 18 4