Philips mx1011b430w DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
MX1011B430W
NPN microwave power transistor
Product specification
Supersedes data of November 1994
File under Discrete Semiconductors, SC15
1997 Feb 18
Philips Semiconductors Product specification
NPN microwave power transistor MX1011B430W
FEATURES
• Suitable for short and medium
pulse applications up to
500 µs/10%
• Internal input and output
prematching networks allow an
easier design of circuits
• Diffused emitter ballasting resistors
improve ruggedness
• Interdigitated emitter-base
structure provides high emitter
efficiency
• Gold metallization with barrier
realizes very stable characteristics
and excellent lifetime
• Multicell geometry improves power
sharing and reduces thermal
resistance.
APPLICATIONS
Intended for use in common base,
class C, broadband, pulsed power
amplifiers for TCAS applications in
the 1030 to 1090 MHz band. Also
suitable for medium pulse, heavy duty
operation within this band.
QUICK REFERENCE DATA
Microwave performance up to T
=25°C in a common base class C
mb
broadband amplifier.
MODE OF
OPERATION
Class C t
CONDITIONS
=30µs;
p
f
(GHz)
1.03 45 ≥480 ≥6.7 ≥45
δ =1%
PINNING - SOT439A
PIN DESCRIPTION
1 collector
2 emitter
3 base connected to flange
ok, 4 columns
Top view
1
33
2
V
(V)
MAM045
CC
P
L
(W)
b
G
P
(dB)
c
e
η
(%)
C
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT439A metal ceramic flange
package with base connected to
flange.
Marking code: MX1011B430W.
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Feb 18 2
Philips Semiconductors Product specification
NPN microwave power transistor MX1011B430W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
Note
1. Up to 0.2 mm from ceramic.
collector-base voltage open emitter − 65 V
collector-emitter voltage open base − 20 V
collector-emitter voltage RBE=0Ω−65 V
emitter-base voltage open collector − 3V
collector current tp≤ 30 µs; δ≤1% − 35 A
total power dissipation tp≤ 30 µs; δ≤1%; Tmb< 75 °C − 1200 W
storage temperature −65 +200 °C
operating junction temperature − 200 °C
soldering temperature t ≤ 10 s; note 1 − 235 °C
1600
handbook, halfpage
P
tot
(W)
1200
800
400
0
−50 200
tp=30µs; δ = 1%; P
0 100
= 1200 W.
tot max
MCD133
Tmb (oC)
Fig.2 Maximum power dissipation derating as a
function of mounting base temperature.
MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Feb 18 3
Loading...