Philips MX1011B200Y Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

MX1011B200Y

Microwave power transistor

Product specification
Supersedes data of January 1995

1997 Feb 18

Philips Semiconductors Product specification

Microwave power transistor MX1011B200Y

FEATURES

• Suitable for short and medium
pulse applications up to 100 µs
pulse width, 10% duty factor

• Diffused emitter ballasting resistors
improve ruggedness

• Interdigitated emitter-base
structure provides high emitter
efficiency

• Gold metallization with barrier
realizes very stable characteristics
and excellent lifetime

• Multicell geometry improves power
sharing reduces thermal resistance

• Internal input and output
prematching networks allow an
easier design of circuits.

APPLICATIONS

Intended for use in common base
class C broadband pulsed power
amplifiers for IFF, TCAS and Mode S
applications in the 1030 MHz to
1090 MHz bandwidth. Also suitable
for medium pulse, heavy duty
operation within the 1030 MHz to
1150 MHz bandwidth.

QUICK REFERENCE DATA

Microwave performance up to T

=25°C in a common base class C

mb

narrowband amplifier.

MODE OF

OPERATION

Class C t

CONDITIONS

=10µs; δ = 1% 1.09 50 200 ≥7.5 ≥45

p

(GHz)

PINNING - SOT439A

PIN DESCRIPTION

1 collector
2 emitter
3 base connected to flange

k, 4 columns

Top view

1

33

2

f

MAM045

V

CC

(V)

b

P

(W)

c

e

G

L

(dB)

η

p

C

(%)

DESCRIPTION

NPN silicon planar epitaxial
microwave power transistor in a
SOT439A metal ceramic flange
package, with base connected to

Fig.1 Simplified outline and symbol.

flange.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1997 Feb 18 2

Philips Semiconductors Product specification

Microwave power transistor MX1011B200Y

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CES

V

CEO

V

EBO

I

CM

P

tot

T

stg

T

j

T

sld

Note

1. Up to 0.2 mm from ceramic.

collector-base voltage open emitter − 65 V
collector-emitter voltage RBE=0 − 65 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 3V
peak collector current tp=10µs; δ =1% − 11.5 A
total power dissipation Tmb<75°C; tp≤ 10 µs; δ≤1% − 515 W
storage temperature −65 +200 °C
junction temperature − 200 °C
soldering temperature t ≤ 10 s; note 1 − 235 °C

600

handbook, halfpage

P

tot

(W)

400

200

0

tp=10µs; δ = 1%.

05050 100 200

150

T ( C)

Fig.2 Power derating curve.

mb

MLC465

o

1997 Feb 18 3

Philips Semiconductors Product specification

Microwave power transistor MX1011B200Y

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MAX. UNIT

R

th j-mb

R

th mb-h

Z

th

Notes

1. See

“Mounting recommendations in the General part of handbook SC19a”

2. Equivalent thermal impedance under pulsed microwave operating conditions.

CHARACTERISTICS

=25°C unless otherwise specified.

T

mb

SYMBOL PARAMETER CONDITIONS MAX. UNIT

I

CBO

I

CES

I

EBO

V

(BR)CBO

V

(BR)CES

thermal resistance from junction to mounting base Tj= 120 °C 2.5 K/W
thermal resistance from mounting base to heatsink note 1 0.2 K/W
thermal impedance from junction to heatsink tp=10µs; δ = 1%;

0.16 K/W

notes 1 and 2

.

collector cut-off current IE= 0; VCB=50V 6 mA
collector cut-off current VBE= 0; VCE=50V 6 mA
emitter cut-off current IC= 0; VEB= 1.5 V 1.5 mA
collector-base breakdown voltage IC=40mA 65 V
collector-emitter breakdown voltage IC= 40 mA; VBE= 0 65 V

APPLICATION INFORMATION

Microwave performance up to T

MODE OF

OPERATION

Class C

CONDITIONS

=10µs; δ = 1% 1.09 50 ≥200

t

p

t

= 0.5 µs; δ = 50%

p

t

=112µs; δ =1%

p

= 6.6 µs; δ = 51%

t

p

t

= 3.3 µs; δ = 43%

p

=32µs; δ = 1% 1.09 50 typ. 210 typ. 7.5 typ. 47

t

p

=25°C in a common-base test circuit as shown in Fig.3.

mb

f

(GHz)

V

(V)

CC

P

(W)

L

typ. 220

1.03 to 1.09 50 typ. 220 typ. 7.5 typ. 50

1.03 to 1.15 50 typ. 100 typ. 6 typ. 35

G

p

(dB)

≥7.5

typ. 8.3

η

C

(%)

≥45

typ. 52

1997 Feb 18 4