Philips MX0912B251Y Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

MX0912B251Y

NPN microwave power transistor

Product specification
Supersedes data of November 1994

1997 Feb 19

Philips Semiconductors Product specification

NPN microwave power transistor MX0912B251Y

FEATURES

• Interdigitated structure; high emitter efficiency

• Diffused emitter ballasting resistors providing excellent

current sharing and withstanding a high VSWR

• Gold metallization realizes very stable characteristics
and excellent lifetime

• Multicell geometry gives good balance of dissipated
power and low thermal resistance

• Input and output matching cell allows an easier design
of circuits.

APPLICATIONS

Intended for use in common base class C broadband
pulse power amplifier from 960 to 1215 MHz for TACAN
application.

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in
a SOT439A metal ceramic flange package, with base
connected to flange. It is mounted in common base
configuration, and specified in class C.

PINNING - SOT439A

PIN DESCRIPTION

1 collector
2 emitter
3 base connected to flange

lumns

Top view

1

2

Fig.1 Simplified outline and symbol.

c

b

33

e

MAM045

QUICK REFERENCE DATA

Microwave performance up to T

MODE OF

OPERATION

Class C

=10µs; δ = 10%

t

p

(GHz)

0.960 to 1.215 50 >235 >7 >42 see Figs 7 and 8

=25°C in a common base class C broadband amplifier.

mb

f

V

(V)

CC

P

(W)

L

G

po

(dB)

η

(%)

C

Zi/Z

L

(Ω)

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1997 Feb 19 2

Philips Semiconductors Product specification

NPN microwave power transistor MX0912B251Y

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CES

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

T

sld

Note

1. Up to 0.2 mm from ceramic.

collector-base voltage open emitter − 65 V
collector-emitter voltage RBE=0Ω−60 V
collector-emitter voltage open base − 20 V
emitter-base voltage open collector − 3V
collector current tp≤ 10 µs; δ≤10% − 15 A
total power dissipation

Tmb=75°C; tp≤ 10 µs; δ≤10% − 690 W

(peak power)
storage temperature −65 +200 °C
operating junction temperature − 200 °C
soldering temperature t ≤ 10 s; note 1 − 235 °C

1000

handbook, halfpage

P

tot

(W)

800

600

400

200

0

−

50 200

tp=10µs; δ = 10%; P

0

tot max

100

= 690 W.

MGL041

Tmb (°C)

Fig.2 Maximum power dissipation derating as a

function of mounting base temperature.

1997 Feb 19 3

Philips Semiconductors Product specification

NPN microwave power transistor MX0912B251Y

THERMAL CHARACTERISTICS

T

= 125 °C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MAX. UNIT

R

th j-mb

R

th mb-h

Z

th j-h

Notes

1. See “

2. Equivalent thermal impedance under nominal pulse microwave operating conditions.

CHARACTERISTICS

=25°C unless otherwise specified.

T

mb

SYMBOL PARAMETER CONDITIONS MAX. UNIT

I

CBO

I

CES

I

EBO

thermal resistance from junction to mounting base CW 1.9 K/W
thermal resistance from mounting base to heatsink CW; note 1 0.2 K/W
thermal impedance from junction to heatsink tp=10µs; δ = 10%

0.28 K/W

notes 1 and 2

Mounting recommendations in the General part of handbook SC19a”

.

collector cut-off current VCB=65V; IE= 0 100 mA

V

=50V; IE= 0 10 mA

CB

collector cut-off current VCE=60V; RBE= 0 100 mA
emitter cut-off current VEB= 1.5 V; IC=0 1 mA

APPLICATION INFORMATION

Microwave performance up to T

=25°C measured in the test jig as shown in Fig.6 and working in class C broadband

mb

mode in pulse; note 1.

MODE OF OPERATION

Class C;

=10µs; δ = 10%

t

p

t

= 300 µs; δ = 10%;

p

f

(GHz)

0.960 to 1.215 50 >235

1.03 to 1.09 50 typ. 280 typ. 8 typ. 48

V

(V)

CC

(2)

P

L

(W)

typ. 275

G

po

(dB)

>7

typ. 7.4

η

C

(%)

>42

typ. 47

see Fig.5

Notes

1. Operating conditions and performance for other pulse formats can be made available on request.

2. V

during pulse.

CC

Zi/Z

L

(Ω)

see Figs 7 and 8

1997 Feb 19 4