Philips MX0912B100Y, MZ0912B100Y Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

MX0912B100Y; MZ0912B100Y

NPN microwave power transistors

Product specification
Supersedes data of June 1992

1997 Feb 20

Philips Semiconductors Product specification

NPN microwave power transistors MX0912B100Y; MZ0912B100Y

FEATURES

• Interdigitated structure provides high emitter efficiency

• Diffused emitter ballasting resistors providing excellent

current sharing and withstanding a high VSWR

• Gold metallization realizes very stable characteristics
and excellent lifetime

• Multicell geometry improves power sharing and low
thermal resistance

• Input and output matching cell allows an easier design
of circuits.

APPLICATIONS

• Common base class-C broadband pulse power
amplifiers operating at 960 to 1215 MHz for TACAN
application.

DESCRIPTION

NPN silicon planar epitaxial microwave power transistors.
The MX0912B100Y has a SOT439A metal ceramic flange

package and improved output prematching cells. It is
recommended for new designs.

The MZ0912B100Y has a SOT443A metal ceramic flange
package with the base connected to the flange. It is
mounted in common base configuration and specified in
class C.

PINNING

PIN DESCRIPTION

1 collector
2 emitter
3 base connected to flange

lumns

Top view

1

33

2

MAM045

Fig.1 Simplified outline and symbol (SOT439A).

handbook, halfpage

1

3

2

c

b

e

c

b

e

Top view

MAM314

Fig.2 Simplified outline and symbol (SOT443A).

QUICK REFERENCE DATA

Microwave performance at T

MODE OF OPERATION

Class-C; t

=10µs; δ = 10 % 0.960 to 1.215 50 >100 >7 >42 see Figs 8 and 9

p

≤ 25 °C in a common base class-C broadband amplifier.

mb

f

(GHz)

V

(V)

CC

P

(W)

L

G

(dB)

P

η

C

(%)

Zi; Z

(Ω)

L

WARNING

Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1997 Feb 20 2

Philips Semiconductors Product specification

NPN microwave power transistors MX0912B100Y; MZ0912B100Y

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CES

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

T

sld

collector-base voltage open emitter − 65 V
collector-emitter voltage RBE=0Ω−60 V
collector-emitter voltage open base − 20 V
emitter-base voltage open collector − 3V
collector current (DC) tp≤ 10 µs; δ≤10 % − 6A
total power dissipation

(peak power)

tp≤ 10 µs; δ≤10 %;
Tmb=75°C

− 290 W

storage temperature −65 +200 °C
operating junction temperature − 200 °C
soldering temperature up to 0.2 mm from ceramic;

− 235 °C

t ≤ 10 s

300

handbook, halfpage

P

tot

(W)

200

100

0

−

50 200

tp=10µs; δ = 10 %; P

0

tot max

100

= 290 W.

MGL046

Tmb (°C)

Fig.3 Maximum power dissipation derating as a

function of mounting-base temperature.

1997 Feb 20 3

Philips Semiconductors Product specification

NPN microwave power transistors MX0912B100Y; MZ0912B100Y

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MAX. UNIT

R

th j-mb

R

th mb-h

Z

th j−h

Notes

1. See “

2. Equivalent thermal impedance under pulsed microwave operating conditions.

CHARACTERISTICS

=25°C unless otherwise specified.

T

mb

SYMBOL PARAMETER CONDITIONS MAX. UNIT

I

CBO

I

CES

I

EBO

thermal resistance from junction to mounting-base Tj= 125 °C 3.2 K/W
thermal resistance from mounting-base to heatsink Tj= 125 °C; note 1 0.2 K/W
thermal impedance from junction to heatsink tp=10µs; δ =10%;

0.43 K/W

Tj= 125 °C; notes 1 and 2

Mounting recommendations in the General part of handbook SC19a”

.

collector cut-off current VCB=65V; IE= 0 40 mA

V

=50V; IE=0 4 mA

CB

collector cut-off current VCB=60V; RBE= 0 40 mA
emitter cut-off current VEB= 1.5 V; IC= 0 400 µA

APPLICATION INFORMATION

Microwave performance up to T

=25°C measured in the test jig as shown in Fig.7 and working in class C broadband

mb

in pulse mode; note 1.

MODE OF OPERATION

Class C;

=10µs; δ = 10%

t

p

t

= 300 µs; δ = 10%;

p

f

(GHz)

V

(V)

CC

(2)

P

(W)

L

0.960 to 1.215 50 ≥100
typ. 115

1.03 to 1.09 50 typ. 125 typ. 8 typ. 50

G

p

(dB)

≥7

typ. 7.6

η

C

(%)

≥42

typ. 44

see Fig.6

Notes

1. Operating conditions and performance for other pulse formats can be made available on request.

2. V

during pulse.

CC

Zi/Z

L

(Ω)

see Figs 8 and 9

1997 Feb 20 4