DISCRETE SEMICONDUCTORS
DATA SHEET
MX0912B100Y; MZ0912B100Y
NPN microwave power transistors
Product specification |
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1997 Feb 20 |
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Supersedes data of June 1992 |
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Philips Semiconductors |
Product specification |
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NPN microwave power transistors |
MX0912B100Y; MZ0912B100Y |
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FEATURES
∙Interdigitated structure provides high emitter efficiency
∙Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
∙Gold metallization realizes very stable characteristics and excellent lifetime
∙Multicell geometry improves power sharing and low thermal resistance
∙Input and output matching cell allows an easier design of circuits.
APPLICATIONS
∙Common base class-C broadband pulse power amplifiers operating at 960 to 1215 MHz for TACAN application.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistors.
The MX0912B100Y has a SOT439A metal ceramic flange package and improved output prematching cells. It is recommended for new designs.
The MZ0912B100Y has a SOT443A metal ceramic flange package with the base connected to the flange. It is mounted in common base configuration and specified in class C.
PINNING
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PIN |
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DESCRIPTION |
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1 |
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collector |
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2 |
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emitter |
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3 |
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base connected to flange |
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lumns |
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b |
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c |
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3 |
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3 |
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2 |
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e |
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MAM045 |
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Top view |
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Fig.1 Simplified outline and symbol (SOT439A).
handbook, halfpage
1
c
b
3
e
2
Top view |
MAM314 |
Fig.2 Simplified outline and symbol (SOT443A).
QUICK REFERENCE DATA
Microwave performance at Tmb ≤ 25 °C in a common base class-C broadband amplifier.
MODE OF OPERATION |
f |
VCC |
PL |
GP |
ηC |
Zi; ZL |
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(GHz) |
(V) |
(W) |
(dB) |
(%) |
(Ω) |
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Class-C; tp = 10 μs; δ = 10 % |
0.960 to 1.215 |
50 |
>100 |
>7 |
>42 |
see Figs 8 and 9 |
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
1997 Feb 20 |
2 |
Philips Semiconductors |
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Product specification |
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NPN microwave power transistors |
MX0912B100Y; MZ0912B100Y |
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LIMITING VALUES |
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In accordance with the Absolute Maximum Rating System (IEC 134). |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VCBO |
collector-base voltage |
open emitter |
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65 |
V |
VCES |
collector-emitter voltage |
RBE = 0 Ω |
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60 |
V |
VCEO |
collector-emitter voltage |
open base |
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− |
20 |
V |
VEBO |
emitter-base voltage |
open collector |
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− |
3 |
V |
IC |
collector current (DC) |
tp ≤ 10 μs; δ ≤ 10 % |
− |
6 |
A |
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Ptot |
total power dissipation |
tp ≤ 10 μs; δ ≤ 10 %; |
− |
290 |
W |
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(peak power) |
Tmb = 75 °C |
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Tstg |
storage temperature |
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−65 |
+200 |
°C |
Tj |
operating junction temperature |
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− |
200 |
°C |
Tsld |
soldering temperature |
up to 0.2 mm from ceramic; |
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235 |
°C |
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t ≤ 10 s |
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300 |
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MGL046 |
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handbook, halfpage |
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Ptot |
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(W) |
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200 |
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100 |
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0 |
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−50 |
0 |
100 |
Tmb (°C) |
200 |
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tp = 10 μs; δ = 10 %; Ptot max = 290 W. |
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Fig.3 Maximum power dissipation derating as a function of mounting-base temperature.
1997 Feb 20 |
3 |
Philips Semiconductors |
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Product specification |
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NPN microwave power transistors |
MX0912B100Y; MZ0912B100Y |
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THERMAL CHARACTERISTICS |
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SYMBOL |
PARAMETER |
CONDITIONS |
MAX. |
UNIT |
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Rth j-mb |
thermal resistance from junction to mounting-base |
Tj = 125 |
°C |
3.2 |
K/W |
Rth mb-h |
thermal resistance from mounting-base to heatsink |
Tj = 125 |
°C; note 1 |
0.2 |
K/W |
Zth j−h |
thermal impedance from junction to heatsink |
tp = 10 ms; d = 10 %; |
0.43 |
K/W |
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Tj = 125 |
°C; notes 1 and 2 |
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Notes
1.See “Mounting recommendations in the General part of handbook SC19a”.
2.Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
MAX. |
UNIT |
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ICBO |
collector cut-off current |
VCB = 65 |
V; IE = 0 |
40 |
mA |
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VCB = 50 V; IE = 0 |
4 |
mA |
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collector cut-off current |
VCB = 60 |
V; RBE = 0 |
40 |
mA |
IEBO |
emitter cut-off current |
VEB = 1.5 V; IC = 0 |
400 |
mA |
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APPLICATION INFORMATION
Microwave performance up to Tmb = 25 °C measured in the test jig as shown in Fig.7 and working in class C broadband in pulse mode; note 1.
MODE OF OPERATION |
f |
VCC |
PL |
Gp |
hC |
Zi/ZL |
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(GHz) |
(V)(2) |
(W) |
(dB) |
(%) |
(W) |
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Class C; |
0.960 to 1.215 |
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³100 |
³7 |
³42 |
see Figs 8 and 9 |
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tp = 10 ms; d = 10% |
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typ. 115 |
typ. 7.6 |
typ. 44 |
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tp = 300 ms; d = 10%; |
1.03 to 1.09 |
50 |
typ. 125 |
typ. 8 |
typ. 50 |
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see Fig.6 |
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Notes
1.Operating conditions and performance for other pulse formats can be made available on request.
2.VCC during pulse.
1997 Feb 20 |
4 |
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