Philips MPSA42 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
MPSA42; MPSA43
NPN high-voltage transistors
Product specification
Supersedes data of 1997 Sep 04
1999 Apr 12
Philips Semiconductors Product specification
NPN high-voltage transistors MPSA42; MPSA43
FEATURES
• Low current (max. 100 mA)
• High voltage (max. 300 V).
PINNING
PIN DESCRIPTION
1 collector
2 base
APPLICATIONS
3 emitter
• Video
• Telephony
• Professional communication equipment.
DESCRIPTION
NPN high-voltage transistor in a TO-92; SOT54 plastic
package. PNP complement: MPSA92.
handbook, halfpage
1
2
3
2
MAM279
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
MPSA42 − 300 V
MPSA43 − 200 V
V
CEO
collector-emitter voltage open base
MPSA42 − 300 V
MPSA43 − 200 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector − 6V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 100 mA
total power dissipation T
≤ 25 °C − 500 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1
3
1999 Apr 12 2
Philips Semiconductors Product specification
NPN high-voltage transistors MPSA42; MPSA43
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
f
T
thermal resistance from junction to ambient note 1 250 K/W
collector cut-off current
MPSA42 I
MPSA43 I
= 0; VCB= 200 V − 100 nA
E
= 0; VCB= 160 V − 100 nA
E
emitter cut-off current
MPSA42 I
MPSA43 I
= 0; VEB=6V − 100 nA
C
= 0; VEB=4V − 100 nA
C
DC current gain VCE= 10 V; note 1
I
= 1 mA 25 −
C
I
=10mA 40 −
C
I
=30mA 40 −
C
collector-emitter saturation voltage IC= 20 mA; IB= 2 mA; note 1 − 500 mV
base-emitter saturation voltage IC= 20 mA; IB= 2 mA; note 1 − 900 mV
collector capacitance IE=ie= 0; VCB= 20 V; f = 1 MHz
MPSA42 − 3pF
MPSA43 − 4pF
transition frequency IC= 10 mA; VCE= 20 V; f = 100 MHz 50 − MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 12 3
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