Philips MPSA26 Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D186

MPSA26; MPSA27

NPN Darlington transistors

Product specification			1999 Apr 27
Supersedes data of 1997 Apr 17

Philips Semiconductors	Product specification
NPN Darlington transistors	MPSA26; MPSA27

FEATURES

∙High current (max. 500 mA)

∙Low voltage (max. 60 V)

∙High DC current gain (min. 10000).

APPLICATIONS

∙ High gain amplification.

DESCRIPTION

NPN Darlington transistor in a TO-92; SOT54 plastic package.

LIMITING VALUES

PINNING

PIN	DESCRIPTION
1	collector
2	base
3	emitter
handbook, halfpage	2	1
1
2
3	TR1
		TR2
	MAM252	3
Fig.1	Simplified outline (TO-92; SOT54)
	and symbol.

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage	open emitter
	MPSA26		−	50	V
	MPSA27		−	60	V
VCES	collector-emitter voltage	VBE = 0
	MPSA26		−	50	V
	MPSA27		−	60	V
VEBO	emitter-base voltage	open collector	−	10	V
IC	collector current (DC)		−	500	mA
ICM	peak collector current		−	1	A
IB	base current (DC)		−	100	mA
Ptot	total power dissipation	Tamb ≤ 25 °C; note 1	−	500	mW
Tstg	storage temperature		−65	+150	°C
Tj	junction temperature		−	150	°C
Tamb	operating ambient temperature		−65	+150	°C

Note

1. Transistor mounted on an FR4 printed-circuit board.

1999 Apr 27

2

Philips Semiconductors				Product specification
NPN Darlington transistors			MPSA26; MPSA27
THERMAL CHARACTERISTICS
SYMBOL	PARAMETER	CONDITIONS	VALUE		UNIT
Rth j-a	thermal resistance from junction to ambient	note 1	250		K/W

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
ICBO	collector cut-off current	IE = 0; VCB = 40 V
	MPSA26		−	−	100	nA
ICBO	collector cut-off current	IE = 0; VCB = 50 V
	MPSA27		−	−	100	nA
IEBO	emitter cut-off current	IC = 0; VEB = 10 V	−	−	100	nA
hFE	DC current gain	IC = 10 mA; VCE = 5 V; see Fig.2	10000	−	−
		IC = 100 mA; VCE = 5 V; see Fig.2	10000	−	−
VCEsat	collector-emitter saturation voltage	IC = 100 mA; IB = 0.1 mA	−	−	1.5	V
VBEsat	base-emitter saturation voltage	IC = 100 mA; IB = 0.1 mA	−	−	1.5	V
VBEon	base-emitter on-state voltage	IC = 100 mA; VCE = 5 V	−	−	2	V
fT	transition frequency	IC = 30 mA; VCE = 5 V; f = 100 MHz	125	220	−	MHz

1999 Apr 27

3