Philips MPSA14 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
MPSA14
NPN Darlington transistor
Product specification
Supersedes data of 1997 Apr 24
1999 Apr 27
Philips Semiconductors Product specification
NPN Darlington transistor MPSA14
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 30 V)
• High DC current gain (min. 10000).
PINNING
PIN DESCRIPTION
1 collector
2 base
3 emitter
APPLICATIONS
• High gain amplification.
DESCRIPTION
NPN Darlington transistor in a TO-92; SOT54 plastic
package. PNP complement: MPSA64.
handbook, halfpage
1
2
3
2
MAM252
1
TR1
TR2
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CES
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 30 V
collector-emitter voltage VBE=0 − 30 V
emitter-base voltage open collector − 10 V
collector current (DC) − 500 mA
peak collector current − 1A
base current (DC) − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 500 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 27 2
Philips Semiconductors Product specification
NPN Darlington transistor MPSA14
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BEon
f
T
thermal resistance from junction to ambient note 1 50 K/W
collector cut-off current IE= 0; VCB=30V − 0.1 µA
emitter cut-off current IC= 0; VEB=10V − 0.1 µA
DC current gain IC= 10 mA; VCE= 5 V; see Fig.2 10000 −
= 100 mA; VCE= 5 V; see Fig.2 20000 −
I
C
collector-emitter saturation voltage IC= 100 mA; IB= 0.1 mA − 1.5 V
base-emitter saturation voltage IC= 100 mA; IB= 0.1 mA − 1.5 V
base-emitter on-state voltage IC= 100 mA; VCE=5V − 2V
transition frequency IC= 10 mA; VCE= 5 V; f = 100 MHz 125 − MHz
80000
handbook, full pagewidth
h
FE
60000
40000
20000
0
−1
10
VCE=5V.
1
10 10
Fig.2 DC current gain; typical values.
MGD837
2
IC (mA)
3
10
1999 Apr 27 3
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