Philips MPS8098 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
MPS8098
NPN general purpose transistor
Product specification
File under Discrete Semiconductors, SC04
1997 May 26
Philips Semiconductors Product specification
NPN general purpose transistor MPS8098
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 60 V).
PINNING
PIN DESCRIPTION
1 collector
2 base
APPLICATIONS
3 emitter
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in a plastic TO-92; SOT54 package.
handbook, halfpage
1
2
3
MAM279
1
2
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
P
h
f
CBO
CEO
CM
tot
FE
T
collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 60 V
peak collector current − 200 mA
total power dissipation T
≤ 25 °C − 500 mW
amb
DC current gain IC= 1 mA; VCE= 5 V 100 300
transition frequency IC= 10 mA; VCE= 5 V; f = 100 MHz 150 − MHz
1997 May 26 2
Philips Semiconductors Product specification
NPN general purpose transistor MPS8098
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 60 V
emitter-base voltage open collector − 6V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 500 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 250 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BE
C
c
C
e
f
T
collector cut-off current IE= 0; VCB=60V − 100 nA
= 0; VCB= 60 V; Tj= 150 °C − 10 µA
I
E
emitter cut-off current IC= 0; VEB=6V − 100 nA
DC current gain VCE=5V
I
= 1 mA 100 300
C
= 10 mA 100 −
I
C
I
= 100 mA 75 −
C
collector-emitter saturation voltage IC= 100 mA; IB= 5 mA; note 1 − 400 mV
base-emitter voltage IC= 1 mA; VCE= 5 V; note 1 500 700 mV
collector capacitance IE=ie= 0; VCB=5V; f=1MHz − 6pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 25 pF
transition frequency IC= 10 mA; VCE= 5 V; f = 100 MHz;
100 − MHz
note 1
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1997 May 26 3
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