Philips MPS3904 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
MPS3904
NPN switching transistor
Product specification
Supersedes data of 1997 Mar 03
1999 Apr 12
Philips Semiconductors Product specification
NPN switching transistor MPS3904
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 40 V).
PINNING
PIN DESCRIPTION
1 collector
2 base
APPLICATIONS
3 emitter
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in a TO-92; SOT54 plastic package.
PNP complement: MPS3906.
handbook, halfpage
1
2
3
MAM279
1
2
3
Fig.1 Simplified outline TO-92; SOT54
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 6V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C − 500 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1999 Apr 12 2
Philips Semiconductors Product specification
NPN switching transistor MPS3904
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
F noise figure I
thermal resistance from junction to ambient note 1 250 K/W
collector cut-off current IE= 0; VCB=30V − 50 nA
emitter cut-off current IC= 0; VEB=5V − 50 nA
DC current gain VCE= 1 V; note 1
= 0.1 mA 40 −
I
C
I
= 1 mA 70 −
C
= 10 mA 100 300
I
C
I
=50mA 60 −
C
I
= 100 mA 30 −
C
collector-emitter saturation voltage IC= 10 mA; IB= 1 mA; note 1 − 200 mV
I
= 50 mA; IB= 5 mA; note 1 − 300 mV
C
base-emitter saturation voltage IC= 10 mA; IB= 1 mA; note 1 650 850 mV
I
= 50 mA; IB= 5 mA; note 1 − 950 mV
C
collector capacitance IE=ie= 0; VCB=5V;
− 5pF
100 kHz ≤ f ≤ 1 MHz
emitter capacitance IC=ic= 0; VEB= 0.5 V;
− 15 pF
100 kHz ≤ f ≤ 1 MHz
transition frequency IC= 10 mA; VCE= 20 V; f = 100 MHz 180 − MHz
= 100 µA; VCE=5V; RS=1kΩ;
C
− 5dB
f = 10 Hz to 15.7 kHz
Switching times (between 10% and 90% levels); (see Fig.2)
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time I
delay time − 50 ns
rise time − 60 ns
turn-off time − 1200 ns
storage time − 1000 ns
fall time − 200 ns
= 10 mA; I
Con
VCC=3V; VBB= −1.9 V
Note
1. Pulse test: t
≤ 300 µs; δ = 0.02.
p
1999 Apr 12 3
Bon
= 1 mA; I
Boff
= −1 mA;
− 110 ns
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