Philips lwe2015r DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
LWE2015R
NPN microwave power transistor
Product specification
Supersedes data of November 1994
File under Discrete Semiconductors, SC15
1997 Feb 19
Philips Semiconductors Product specification
NPN microwave power transistor LWE2015R
FEATURES
• Interdigitated structure provides high emitter efficiency
• Diffused emitter ballasting resistor provides excellent
current sharing and withstanding a high VSWR
• Gold metallization realizes very stable characteristics
and excellent lifetime
• Multicell geometry gives good balance of dissipated
power and low thermal resistance.
APPLICATIONS
• Common emitter class-A amplifiers up to 2.3 GHz in CW
conditions for military and professional applications.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT446A metal ceramic studless package.
PINNING - SOT446A
PIN DESCRIPTION
1 collector
2 base
3 emitter
handbook, halfpage
1
2
Marking code: 411
Fig.1 Simplified outline and symbol.
3
c
b
e
MAM313
QUICK REFERENCE DATA
Microwave performance up to T
MODE OF OPERATION
=25°C in a common emitter class-A selective amplifier.
mb
f
(GHz)
V
(V)
CE
I
C
(mA)
P
L1
(W)
G
po
(dB)
Z
(Ω)
i
Z
(Ω)
Class-A (CW) 2.3 16 250 ≥1.2 ≥7.5 3.5 + j11 6.4 + j2
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
L
1997 Feb 19 2
Philips Semiconductors Product specification
NPN microwave power transistor LWE2015R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CER
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
collector-base voltage open emitter − 35 V
collector-emitter voltage RBE=70Ω−20 V
collector-emitter voltage open base − 16 V
emitter-base voltage open collector − 3V
collector current (DC) − 450 mA
total power dissipation Tmb≤ 75 °C − 6W
storage temperature −65 +200 °C
operating junction temperature − 200 °C
soldering temperature at 0.1 mm from case; t ≤ 10 s − 235 °C
handbook, halfpage
1
I
C
(A)
−1
10
−2
10
1101610
Tmb≤ 75°C.
(1) Region of permissible DC operation.
(2) Permissible extension provided RBE≤ 70 Ω.
(1) (2)
Fig.2 DC SOAR.
VCE (V)
MGL005
8
P
tot
(W)
6
4
2
2
0
0 50 100 200
MGD972
150
Tmb (°C)
Fig.3 Power derating curve.
1997 Feb 19 3
Philips Semiconductors Product specification
NPN microwave power transistor LWE2015R
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MAX. UNIT
R
th j-mb
CHARACTERISTICS
=25°C unless otherwise specified.
T
mb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
C
cb
C
ce
C
eb
thermal resistance from junction to mounting-base Tj=75°C 12 K/W
collector cut-off current VCB= 25 V; IE=0 −−≤10 µA
emitter cut-off current VEB= 1.5 V; IC=0 −−≤10 µA
DC current gain VCE=5V; IC= 230 mA − 40 −
collector-base capacitance VCB= 16 V; VEB= 1.5 V;
− 2 − pF
IE=IC= 0; f = 1 MHz
collector-emitter capacitance VCE= 16 V; VEB= 1.5 V;
− 2 − pF
IE=IC= 0; f = 1 MHz
emitter-base capacitance VCB= 10 V; VEB=1V;
− 15 − pF
IC=IE= 0; f = 1 MHz
APPLICATION INFORMATION
Microwave performance up to T
MODE OF OPERATION
Class-A (CW) 2.3 16 250 ≥1.2
=25°C in a common emitter class-A selective circuit; note 1.
mb
f
(GHz)
V
(V)
CE
I
C
(mA)
P
L1
(W)
typ. 1.6
typ. 8.1
G
po
(dB)
≥7.5
Z
(Ω)
i
Z
(Ω)
3.5 + j11 6.4 + j2
Note
1. Circuit consists of prematching circuit boards in combination with complementary input and output slug tuners.
L
1997 Feb 19 4
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