Philips LVE21050R Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
LVE21050R
NPN microwave power transistor
Product specification
Supersedes data of June 1992
1997 Feb 14
Philips Semiconductors Product specification
NPN microwave power transistor LVE21050R
FEATURES
• Diffused emitter ballasting resistors provide excellent
current sharing and withstanding a high VSWR
• Self-aligned process entirely ion implanted
• Gold metallization ensures an optimum temperature
profile with excellent performance and reliability
• Input matching cell improves input impedance and
allows an easier design of wideband circuits.
APPLICATIONS
• Common emitter class-A linear power amplifiers up
to 4.2 GHz.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT445A metal ceramic flange package with the emitter
connected to the flange.
QUICK REFERENCE DATA
Microwave performance up to T
=25°C in a common emitter class-A circuit.
mb
PINNING - SOT445A
PIN DESCRIPTION
1 collector
2 base
3 emitter connected to flange
handbook, halfpage
33
Top view
1
2
Fig.1 Simplified outline and symbol.
c
b
e
MAM251
MODE OF OPERATION
f
(GHz)
V
(V)
CC
I
(A)
C
P
L1
(W)
G
po
(dB)
Zi; Z
(Ω)
L
Class-A (CW) 2.1 16 1.1 typ. 5.5 typ. 8 see Fig 4
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 14 2
Philips Semiconductors Product specification
NPN microwave power transistor LVE21050R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CER
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
collector-base voltage open emitter − 40 V
collector-emitter voltage RBE=47Ω−20 V
collector-emitter voltage open base − 16 V
emitter-base voltage open collector − 3V
collector current (DC) − 2A
total power dissipation Tmb≤ 75 °C − 18 W
storage temperature −65 +200 °C
operating junction temperature − 200 °C
soldering temperature at 0.3 mm from case; t ≤ 10 s − 235 °C
10
handbook, halfpage
I
C
(A)
1
−1
10
−2
10
110
Tmb≤ 75°C.
(1) Region of permissible DC operation.
(2) Permissible extension provided RBE≤ 47 Ω.
(1) (2)
15
Fig.2 DC SOAR.
VCE (V)
MGL004
20
handbook,
P
tot
(W)
16
12
8
4
2
10
0
0 50 100 200
MGD971
150
Tmb (°C)
Fig.3 Power dissipation derating as a function of
mounting base temperature.
1997 Feb 14 3
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