Philips LV2327E40R Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
LV2327E40R
NPN microwave power transistor
Product specification
Supersedes data of November 1994
File under Discrete Semiconductors, SC15
1997 Feb 18
Philips Semiconductors Product specification
NPN microwave power transistor LV2327E40R
FEATURES
• Interdigitated structure provides
high emitter efficiency
• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
• Gold metallization realizes very
stable characteristics and excellent
lifetime
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance.
• Input and output matching cell
improves the impedances and
facilitates the design of wideband
circuits.
APPLICATIONS
Common emitter class A linear
wideband power amplifiers in the
2.3 to 2.7 GHz band.
QUICK REFERENCE DATA
Microwave performance for T
=25°C in a wideband common-emitter
case
class A circuit.
MODE OF
OPERATIONf(MHz)
CW; linear
2.3 to 2.7 16 1 ≥4 ≥7 11 + j3 7.5 − j9
V
(V)
CE
I
(A)
C
amplifier
PINNING - SOT445B
PIN DESCRIPTION
1 collector
2 base
3 emitter connected to flange
handbook, halfpage
1
P
G
L1
(W)
PO
(dB)
c
b
Z
(Ω)
i
Z
L
(Ω)
DESCRIPTION
NPN silicon planar epitaxial
33
2
Top view
MAM315
e
microwave power transistor in a
SOT445B metal ceramic flange
package, with emitter connected to
the flange.
Marking code: 2327E40R.
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Feb 18 2
Philips Semiconductors Product specification
NPN microwave power transistor LV2327E40R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
CER
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
Note
1. At 0.3 mm from the case.
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 15 V
collector-emitter voltage RBE=47Ω−20 V
emitter-base voltage open collector − 3V
collector current (DC) − 2A
total power dissipation Tmb≤ 75 °C − 18 W
storage temperature −65 +200 °C
junction temperature − 200 °C
soldering temperature t ≤ 10 s; note 1 − 235 °C
MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Feb 18 3
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