Philips J110, J108, J109 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
J108; J109; J110
N-channel silicon junction FETs
Product specification
Supersedes data of April 1995
File under Discrete Semiconductors, SC07
1996 Jul 30
Philips Semiconductors Product specification
N-channel silicon junction FETs J108; J109; J110
FEATURES
• High speed switching
• Interchangeability of drain and source connections
• Low R
at zero gate voltage (<8 Ω for J108).
DSon
PINNING - TO-92
PIN SYMBOL DESCRIPTION
1 g gate
2 s source
3 d drain
APPLICATIONS
• Analog switches
• Choppers and commutators.
DESCRIPTION
handbook, halfpage
1
2
3
g
N-channel symmetrical silicon junction field-effect
transistors in a TO-92 package.
MAM197
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
DS
GSoff
drain-source voltage −±25 V
gate-source cut-off voltage ID=1µA; VDS=5V
J108 −3 −10 V
J109 −2 −6V
J110 −0.5 −4V
I
DSS
drain current VGS= 0; VDS=5V
J108 80 − mA
J109 40 − mA
J110 10 − mA
P
tot
total power dissipation up to T
=50°C − 400 mW
amb
d
s
1996 Jul 30 2
Philips Semiconductors Product specification
N-channel silicon junction FETs J108; J109; J110
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
GSO
V
GDO
I
G
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-a
drain-source voltage −±25 V
gate-source voltage open drain −−25 V
gate-drain voltage open source −−25 V
forward gate current (DC) − 50 mA
total power dissipation up to T
=50°C − 400 mW
amb
storage temperature −65 150 °C
operating junction temperature − 150 °C
thermal resistance from junction to ambient 250 K/W
STATIC CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)GSS
V
GSoff
gate-source breakdown voltage IG= −1 µA; VDS=0 −−−25 V
gate-source cut-off voltage ID=1µA; VDS=5V V
J108 −3 −−10 V
J109 −2 −−6V
J110 −0.5 −−4V
I
DSS
drain current VGS= 0; VDS=15V
J108 80 −−mA
J109 40 −−mA
J110 10 −−mA
I
GSS
I
DSX
R
DSon
gate leakage current VGS= −15 V; VDS=0 −−−3nA
drain-source cut-off current VGS= −10 V; VDS=5V −−3nA
drain-source on-state resistance VGS= 0; VDS= 100 mV
J108 −−8Ω
J109 −−12 Ω
J110 −−18 Ω
1996 Jul 30 3
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